An Enhanced Low Power High PSRR Band Gap Voltage Reference Using MOSFETS in Strong Inversion Region

Abstract

In this paper, a band gap voltage reference using MOSFETs in strong inversion region is presented. The proposed circuit represents a high PSRR (Power Supply Rejection Ratio) and low temperature sensitivity and is capable of operating properly at supply voltages lower than 1v. In the designed circuit, the PSRR is improved using regulated voltage and a feedback loop. In addition, the circuit is independent on supply voltage noise. The circuit is designed in 180nm TSMC CMOS technology and is simulated using HSPICE. The obtained output voltage is 466.7mV and the obtained temperature deviation average under temperatures between-20°c to 100°c is 29.1 ppm/c°. PSRR is 109 dB at low frequencies. Calculated power dissipation with 1.2v supply voltage in room temperature is 42µw.