An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Dao, Nguyen Cong; Kass, Abdallah El; Azghadi, Mostafa Rahimi; Jin, Craig; Scott, Jonathan B.; Leong, Philip H. W.

doi:10.1016/j.microrel.2016.12.007

Cited by 30 publications

(27 citation statements)

References 11 publications

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“…However, this field-assisted process of ionization (e.g., Poole-Frenkel [12]) happens in early depletion and is already completed near the surface before reaching the on-set of strong inversion where V T is evaluated. This process can thus be possibly neglected in V T and is not a justification for fitting parameters as done in [10].…”

Section: ) Incomplete Ionization (Field)mentioning

confidence: 99%

“…To arrive at the most accurate model for V T , incomplete ionization of the dopants and other low-temperature phenomena need to be taken into account by starting from the physics. While many models have been proposed so far for the V T at low temperature, they are either semi-empirical, validated only down to moderate cryogenic temperature, or not accounting for the various physical phenomena contributing to the temperature dependence of V T [7]- [10]. For instance, the physics-based model from Jaeger and Fox [8] is valid down to 77 K and does not account for the dopant freezeout.…”

Section: Introductionmentioning

confidence: 99%

“…For instance, the physics-based model from Jaeger and Fox [8] is valid down to 77 K and does not account for the dopant freezeout. Recently, Dao et al [10] derived a V T model valid down to 6 K by introducing two empirical parameters to account for the field-assisted ionization of the dopants. In this work, we demonstrate that both freezeout and field-assisted ionization are accounted for by a single incomplete-ionization term in the Poisson-Boltzmann equation.…”

Section: Introductionmentioning

confidence: 99%

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Cryogenic MOSFET Threshold Voltage Model

Beckers

Jazaeri

Enz

2019

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

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This paper presents a physics-based model for the threshold voltage in bulk MOSFETs valid from room down to cryogenic temperature (4.2 K). The proposed model is derived from Poisson's equation including bandgap widening, intrinsic carrier-density scaling, and incomplete ionization. We demonstrate that accounting for incomplete ionization in the expression of the threshold voltage is critical for an accurate estimation of the current. The model is validated with our experimental results from nMOSFETs of a 28-nm CMOS process. The developed model is a key element for a cryo-CMOS compact model and can serve as a guide to optimize processes for high-performance cryo-computing and ultra-low-power quantum computing.

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Section: ) Incomplete Ionization (Field)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Cryogenic MOSFET Threshold Voltage Model

Beckers

Jazaeri

Enz

2019

ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC)

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“…which is difficult to accurately express by analytical formula. Gate-controlled diodes have been frequently used to characterize leakage current components and extract minority carrier lifetime [16] [24]. Some detailed leakage current analyses with gate-controlled diodes have been performed in regular thickness wafer for a radiation detector [16].…”

Section: Noise Optimization Of the Csa Circuitmentioning

confidence: 99%

“…Gate-controlled diodes have been frequently used to characterize leakage current components and extract minority carrier lifetime [16] [24]. Some detailed leakage current analyses with gate-controlled diodes have been performed in regular thickness wafer for a radiation detector [16]. This research, presents the ENC as a function of the detector capacitor and the feedback for a fixed value of W and L, according to the adopted CMOS process.…”

Section: Noise Optimization Of the Csa Circuitmentioning

confidence: 99%

A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

Bhuiyan¹

2020

Informacije MIDEM

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The Charge Sensitive Amplifier (CSA) is the key module of the front-end electronics of various types of Silicon detectors and most radiation detection systems. High gain, stability, and low input noise are the major concerns of a typical CSA circuit in order to achieve amplified susceptible input charge (current) for further processing. To design such a low-noise, stable, and low power dissipation solution, a CSA is required to be realized in a complementary metal-oxide-semiconductor (CMOS) technology with a compact design. This research reports a low-noise highly stabile CSA design for Silicon detectors applications, which has been designed and validated in TSMC 0.35 um CMOS process. In a typical CSA design, the detector capacitance and the input transistor's width are the dominant parameters for achieving low noise performance. Therefore, the Equivalent Noise Charge (ENC) with respect to those parameters has been optimized, for a range of detector capacitance from 0.2 pF-2 pF. However, the parallel noise of the feedback was removed by adopting a voltage-controlled NMOS resistor, which in turn helped to achieve high stability of the circuit. The simulation results provided a baseline gain of 9.92 mV/fC and show that ENC was found to be 42.5 e-with 3.72 e-/pF noise slope. The Corner frequency exhibited by the CSA is 1.023 GHz and the output magnitude was controlled at-56.8 dB; it dissipates 0.23 mW with a single voltage supply of 3.3 V with an active die area of 0.0049 mm 2 .

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Investigation of long channel bulkMOSFETsthreshold voltage model down to 10mKand key analog parameters at 4 K

Su,

Cai,

Lin

et al. 2024

Int J Numerical Modelling

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Threshold voltage behavior at cryogenic temperatures is dominated by interface traps. This mechanism leads to different trends of the threshold voltage for NMOS and PMOS toward deep cryogenic temperature. This study investigates threshold voltage (Vth) at cryogenic temperatures down to 10 mK for the first time, based on the recently developed physical charge‐based analytical threshold voltage model. To investigate the impact of devices on circuits at low temperatures, crucial MOSFET and analog design parameters, including transconductance (gm), subthreshold swing (SS), linear region current (Ilin) and gm/IDS related parameters are characterized and compared from 300 to 4 K. A Discussion on circuit performance and power consumption has been conducted to provide useful insights for low‐temperature CMOS circuit design.

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An enhanced MOSFET threshold voltage model for the 6–300 K temperature range

Abstract: An enhanced MOSFET threshold voltage model for the 6-300 K temperature range. Microelectronics Reliability, 69 pp. 36-39.

Cited by 30 publications

References 11 publications

Cryogenic MOSFET Threshold Voltage Model

Cryogenic MOSFET Threshold Voltage Model

A 0.35μm Low-Noise Stable Charge Sensitive Amplifier for Silicon Detectors Applications

Investigation of long channel bulkMOSFETsthreshold voltage model down to 10mKand key analog parameters at 4 K

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