An Enhanced Photoelectric Conversion Efficiency of n-Type Crystalline Silicon p—n Junctions Using a Ferroelectric Passivation Layer

Abstract

A multilayered structure consisting of ferroelectric Pb(Zr,Ti)O3 (PZT) film is deposited by sputtering on the crystalline silicon p-n junction without any buffer layer. The photovoltaic output of the p-n junction is greatly enhanced due to the usage of In2O3:Sn(ITO)/PZT as top surface passivation layers. The short circuit current and photoelectric conversion efficiency of the p-n junction with ITO/PZT ferroelectric films increase about four and six times, respectively, compared with those without any passivation layers. Improvement in the passivated device is mainly attributed to the built-in field at the ITO/PZT interface.

Ferroelectric Ba0.75Sr0.25TiO3 tunable charge transfer in perovskite devices

“…[15][16][17][18] Ferroelectrics is a candidate for application in photoelectric devices, such as light emitting diodes, sensors and solar cells, in which the charge transfer can be efficiently tuned with the introducing of ferroelectrics. [19] PSCs have triggered extensive attention since 2009, [20] and its rapid development reveals the considerable application potential. [21][22][23] Ba 1−x Sr x TiO 3 is a traditional dielectric material of which the ferroelectricity can be easily controlled by changing the Sr molar ratio (x < 0.3 BST exhibits ferroelectricity at room temperature), which makes it a reliable choice for ferroelectric applications.…”