An enhanced power factor <i>via</i> multilayer growth of Ag-doped skutterudite CoSb<sub>3</sub> thin films

Zheng, Zhaoke; Wei, Meng; Luo, Jingting; Fu, Li; Liang, Guangxing; Liang, Yan; Jin, Hao; Ma, Hongli; Zhang, Xianghua; Fan, Ping

doi:10.1039/c8qi00207j

Cited by 15 publications

(23 citation statements)

References 47 publications

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“…Comparing to our previous work [31], similar results can be found, suggesting that the Ag is most likely filling into the vacant lattice void. Generally, the S and σ are both dependent on the carrier concentration with inverse relationship.…”

Section: Accepted Manuscriptsupporting

confidence: 87%

“…Generally, the S and σ are both dependent on the carrier concentration with inverse relationship. Thus, it demonstrates that Ag is an efficient dopant that can resolve the conflict between S and σ which might attribute to the increased carrier concentration and electron effective mass after the Ag-doping [31]. Additionally, the room-temperature Seebeck coefficient and electrical conductivity of the thin films were measured for three times and the results show that their have few change, indicating high thermal stability of the films.…”

Section: Accepted Manuscriptmentioning

confidence: 91%

“…In our previous work, we found that the Ag can fill into the lattice voids and efficiently regulate the performance of the CoSb 3 thin film. However, there are many defect states on the thin film surface impeding the further improvement of thin film thermoelectric properties [31]. Recently, we have found that the CoSb 3 thin film had less surface defects when heated the substrate during the thin film deposition, rather than annealing after deposition process [32].…”

Section: Accepted Manuscriptmentioning

confidence: 99%

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Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

et al. 2019

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In this work, Ag doped CoSb 3 thin films were grown directly on the heated substrate by the simple and effective magnetron sputtering process. The micro-structure and thermoelectric properties of the doped thin films are found to strongly depend on the Ag doping content. High-resolution transmission electron microscope image and corresponding selected-area electron diffraction pattern confirm that the doped thin film has single CoSb 3 crystal structure with well-crystallized. The high crystal quality of the doped thin film will lead to good thermoelectric properties. As expected, both the electrical conductivity and Seebeck coefficient are greatly enhanced after Ag doping, resulting in the enhancement of power factor, suggesting that the proposed strategy can be applied to prepare high-performance thermoelectric thin films.

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Section: Accepted Manuscriptsupporting

confidence: 87%

Section: Accepted Manuscriptmentioning

confidence: 91%

Section: Accepted Manuscriptmentioning

confidence: 99%

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Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

et al. 2019

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“…The decrease in κ is mainly due to the fact that the high-density nano-interfaces in the low dimensional materials enhance significantly the scattering of electrons and phonons. In the past ten years, TE properties of CoSb 3 materials have been improved significantly by the nanocrystallization of CoSb 3 -based materials [124][125][126][127][128][129][130][131][132][133][134][135][136][137][138][139][140] or the preparation of thin film materials [141][142][143][144][145][146][147]. Toprak et al [125] reported a novel chemical alloying method to prepare CoSb 3 materials with different nanoparticle sizes.…”

Section: Optimization At Atomic-molecular Scalementioning

confidence: 99%

“…This ZT value of the film is only between half and one third of the bulk materials because of the lower mobility. Recently, Ag-doped CoSb 3 thin films were prepared by inter-layer diffusion method [145]. This film has a higher power factor value of 0.11 mW•m -1 •K -2 at 573 K, which is 5 times that of undoped CoSb 3 samples.…”

Section: Optimization At Atomic-molecular Scalementioning

confidence: 99%

A review of CoSb3-based skutterudite thermoelectric materials

et al. 2020

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The binary skutterudite CoSb3 is a narrow bandgap semiconductor thermoelectric (TE) material with a relatively flat band structure and excellent electrical performance. However, thermal conductivity is very high because of the covalent bond between Co and Sb, resulting in a very low ZT value. Therefore, researchers have been trying to reduce its thermal conductivity by the different optimization methods. In addition, the synergistic optimization of the electrical and thermal transport parameters is also a key to improve the ZT value of CoSb3 material because the electrical and thermal transport parameters of TE materials are closely related to each other by the band structure and scattering mechanism. This review summarizes the main research progress in recent years to reduce the thermal conductivity of CoSb3-based materials at atomic-molecular scale and nano-mesoscopic scale. We also provide a simple summary of achievements made in recent studies on the non-equilibrium preparation technologies of CoSb3-based materials and synergistic optimization of the electrical and thermal transport parameters. In addition, the research progress of CoSb3-based TE devices in recent years is also briefly discussed.

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Ce‐filled Ni_1.5Co_2.5Sb₁₂ Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance

Li,

Shi,

Zhu

et al. 2023

Advanced Energy Materials

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Realizing high thermoelectric performance in CoSb3 skutterudite‐based thin films and their devices is historically challenging, especially due to the lack of high‐performing thin‐film‐based device working at medium‐to‐high temperatures. Here, a record‐high ZT of 1.1 is achieved at 683 K in an n‐type Ce0.3Ni1.5Co2.5Sb12 thin film, fabricated from a self‐designed target via advanced pulsed laser deposition. Both experimental and computational results confirm that the Ce‐filling and metal‐featured nanoinclusions such as CeSb contribute to high electrical conductivity, while the Ni‐doping and significantly strengthen the energy filtering effect that occurs at the dense interfaces between the Ce0.3Ni1.5Co2.5Sb12 matrix and the nanoinclusions which leads to a large Seebeck coefficient, giving rise to such a high ZT. In addition, a new‐type CoSb3 thin‐film‐based device is successfully fabricated, which exhibits a high output power density of 8.25 mW cm−2 at a temperature difference of 140 K and a cold‐side temperature of 573 K, indicating the potential for application to medium‐to‐high‐temperature power generation scenarios.

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An enhanced power factor via multilayer growth of Ag-doped skutterudite CoSb₃ thin films

Abstract: The Seebeck coefficient and electrical conductivity of the CoSb3 thin films are enhanced after Ag doping, leading to substantial enhancement of the power factor.

Cited by 15 publications

References 47 publications

Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

A review of CoSb3-based skutterudite thermoelectric materials

Ce‐filled Ni_1.5Co_2.5Sb₁₂ Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance

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An enhanced power factor via multilayer growth of Ag-doped skutterudite CoSb3 thin films

Abstract: The Seebeck coefficient and electrical conductivity of the CoSb3 thin films are enhanced after Ag doping, leading to substantial enhancement of the power factor.

Cited by 15 publications

References 47 publications

Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

Effects of Ag-doped content on the microstructure and thermoelectric properties of CoSb3 thin films

A review of CoSb3-based skutterudite thermoelectric materials

Ce‐filled Ni1.5Co2.5Sb12 Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance

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Product

Resources

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An enhanced power factor via multilayer growth of Ag-doped skutterudite CoSb₃ thin films

Ce‐filled Ni_1.5Co_2.5Sb₁₂ Skutterudite Thin Films with Record‐High Figure of Merit And Device Performance