An Epitaxial Ferroelectric Tunnel Junction on Silicon

Li, Zhipeng; Guo, Xiao; Lu, Haitao; Zhang, Zaoli; Song, Dongsheng; Cheng, Shaobo; Bosman, Michel; Zhu, Jing; Dong, Zhili; Zhu, Weiguang

doi:10.1002/adma.201402527

Cited by 67 publications

(46 citation statements)

References 32 publications

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“…[ 2,[5][6][7]13,[18][19][20][21] We notice however, that a few reports exist that the OFF state is obtained when P points away from LSMO. [ 3,4,22,23 ] In Figure 1 b we show the polarization-dependent junction resistance. In this experiment, consecutive poling (writing pulses V write ) are applied and the junction resistance is subsequently determined by measuring I-V curves and extracting the resistance at 100 mV.…”

Section: Doi: 101002/adma201405117mentioning

confidence: 98%

Large Room‐Temperature Electroresistance in Dual‐Modulated Ferroelectric Tunnel Barriers

et al. 2015

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Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.

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Section: Doi: 101002/adma201405117mentioning

confidence: 98%

Large Room‐Temperature Electroresistance in Dual‐Modulated Ferroelectric Tunnel Barriers

et al. 2015

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“…[15][16][17][18][19][20] Very recently, the realization of an epitaxial perovskite BaTiO 3 (BTO) based FTJ on silicon suggests the possibility of integrating FTJs/ MFTJs on silicon wafers, thus the integration with semiconductor electronics. 21 In addition to the capability to control electron and spin tunneling via ferromagnetic and ferroelectric polarizations in the electrode and barrier layers, the MFTJs have also been predicted to have other advantages beyond the simple addition of an MTJ with an FTJ. In an MFTJ, the carrier concentration and/or chemical bonding strength manipulations at the ferroelectric/ferromagnetic interfaces may give rise to an interfacial magnetoelectric effect, which can change the magnetic anisotropy, coercivity, or even the interfacial magnetic structure by an electric field through switchable ferroelectric polarization.…”

Section: Introductionmentioning

confidence: 99%

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Yin

Raju

et al. 2015

Journal of Applied Physics

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Articles you may be interested inPrediction of giant magnetoelectric effect in LaMnO3/BaTiO3/SrMnO3 superlattice: The role of n-type SrMnO3/LaMnO3 interface J. Appl. Phys. 116, 074102 (2014) As semiconductor devices reach ever smaller dimensions, the challenge of power dissipation and quantum effect place a serious limit on the future device scaling. Recently, a multiferroic tunnel junction (MFTJ) with a ferroelectric barrier sandwiched between two ferromagnetic electrodes has drawn enormous interest due to its potential applications not only in multi-level data storage but also in electric field controlled spintronics and nanoferronics. Here, we present our investigations on four-level resistance states, giant tunneling electroresistance (TER) due to interfacial magnetoelectric coupling, and ferroelectric control of spin polarized tunneling in MFTJs. Coexistence of large tunneling magnetoresistance and TER has been observed in manganite/(Ba, Sr)TiO 3 /manganite MFTJs at low temperatures and room temperature four-resistance state devices were also obtained. To enhance the TER for potential logic operation with a magnetic memory, La 0.7 Sr 0.3 MnO 3 /BaTiO 3 /La 0.5 Ca 0.5 MnO 3 /La 0.7 Sr 0.3 MnO 3 MFTJs were designed by utilizing a bilayer tunneling barrier in which BaTiO 3 is ferroelectric and La 0.5 Ca 0.5 MnO 3 is close to ferromagnetic metal to antiferromagnetic insulator phase transition. The phase transition occurs when the ferroelectric polarization is reversed, resulting in an increase of TER by two orders of magnitude. Tunneling magnetoresistance can also be controlled by the ferroelectric polarization reversal, indicating strong magnetoelectric coupling at the interface. V C 2015 AIP Publishing LLC.

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“…Например, анализ ограничений для использования сегнетоэлектрических пленок в FeRAM сформули-рован в работе [3]. В последние годы вопросам ста-бильности поляризованного состояния и динамики переключения поляризации придается большое значение [4][5][6][7][8]. Влияние деформации элементарной ячейки в сегнетоэлектрических гетероструктурах на их электрофизические свойства за счет различ-ных механизмов роста и типа подложки обобщено в обзоре [9].…”

Section: Introductionunclassified

Field Effect in Metal-Ferroelectric-Semiconductor Structure With Multilayer Ferroelectric

Stryukov¹,

Мухортов²,

Biryukov³

et al. 2017

Sc. South Russ.

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Аннотация. Одной из важнейших концепций использования сегнетоэлектрических гетероструктур в микроэлектронике является энергонезависимая память (FeRAM), где в качестве подзатворного ди-электрика в полевом транзисторе используется сегнетоэлектрическая пленка. Вторым важным приме-нением сегнетоэлектрических пленок является их использование при создании принципиально новых микроэлектромеханических устройств (МЕМС). Реализация МЕМС с использованием сегнетоэлек-трических наноразмерных пленок в качестве активного элемента по своим параметрам в десятки раз будет превосходить существующие аналоги. В последние годы вопросам стабильности поляризован-ного состояния и динамики переключения поляризации придается большое значение. В данной работе впервые приведены результаты по исследованию эффекта поля в структуре металл -сегнетоэлектрик -полупроводник, где в качестве сегнетоэлектрика использованы многослойные сегнетоэлектрические слои. Использование многослойных сегнетоэлектрических гетероструктур приводит к самосогласова-нию поверхностных состояний на границах полупроводник -сегнетоэлектрик и сегнетоэлектрик -сег-нетоэлектрик с переключаемой под действием внешнего поля спонтанной поляризацией. Это позволяет создать устойчивое поляризованное состояние с незначительной ее релаксацией.Ключевые слова: сегнетоэлектрическая пленка, эффект поля, структура, двумерные напряжения, двухслойные сегнетоэлектрики. One of the most important concepts of use of ferroelectric (FE) heterostructures in microelectronics is a non-volatile memory (FeRAM), where ferroelectric film is used as a gate dielectric in a field transistor. The second important application of ferroelectric films is their usage in the creation of new microelectromechanical systems (MEMS). The implementation of MEMS using nanoscale ferroelectric films as an active element will allow to create devices with parameters which exceed existing analogues in scores of times. In recent years, the issues of stability of the polarized state and the dynamics of polarization switching become more important. In this work, we present for the first time the results on field effect investigation in the metal-ferroelectricsemiconductor structure where composite ferroelectric layers are used as a ferroelectric. It is shown that the use of multilayer ferroelectric heterostructures leads to the self-consistency of surface states at the semiconductorferroelectric and ferroelectric -ferroelectric boundaries with spontaneous polarization switching under the influence of the external field. It allows to create a stable polarized state with a negligible relaxation.

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An Epitaxial Ferroelectric Tunnel Junction on Silicon

Cited by 67 publications

References 32 publications

Large Room‐Temperature Electroresistance in Dual‐Modulated Ferroelectric Tunnel Barriers

Large Room‐Temperature Electroresistance in Dual‐Modulated Ferroelectric Tunnel Barriers

Multiferroic tunnel junctions and ferroelectric control of magnetic state at interface (invited)

Field Effect in Metal-Ferroelectric-Semiconductor Structure With Multilayer Ferroelectric

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