An estimate of the electron effective mass in titanium nitride using UPS and EELS

Walker, Christopher; Matthew, J.A.D.; Anderson, C. A.; Brown, N. M. D.

doi:10.1016/s0039-6028(98)00459-2

Cited by 38 publications

(16 citation statements)

References 40 publications

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“…Titanium nitrides, TiN, which are formed by various techniques such as ion implantation, ion beam assisted deposition, magnetron sputtering, physical vapor deposition (PVD) and chemical vapor deposition (CVD), are non-stoichiometric compounds and show covalent properties together with metallic and ionic properties. These make them fascinating for both fundamental research and technological applications [1][2][3][4][5][6][7][8][9][10][11]. The nitrides of Ti are technologically useful as, for instance, corrosion resistant coatings on cutting tools and diffusion barriers in silicon microcircuits [2][3][4][5][6][7][8].…”

Section: Introductionmentioning

confidence: 99%

In-situ Observation of Nitriding Processes of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope

Kasukabe

Chen

Yamamoto

et al. 2011

e-J. Surf. Sci. Nanotechnol.

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Both hcp-Ti and CaF2-type TiHx (x ∼ = 1.5), and only hcp-Ti, with preferred orientations have been deposited on NaCl (001) substrates held at room temperature (RT) and 250 • C, respectively. In order to clarify atomistic growth processes of TiNy films due to the implantation of nitrogen ions (N + 2) with 62 keV into as-deposited Ti films, changes of the concentration of H and/or N atoms in Ti films, and of the crystallographic and electronic structures of the films by heating and by nitriding have been investigated by in-situ transmission electron microscope (TEM) equipped with electron energy loss spectroscopy (EELS), with the aid of molecular orbital calculations. Hydrogen atoms which constitute TiHx in the Ti films deposited at RT are released with heating, and are completely released at 350 • C. The H-released unstable fcc-Ti sublattice is then transformed into hcp-Ti. The energy loss peak due to the plasmon excitation observed by EELS for TiHx shifts to the lower energy side with the decrease in the electron density in the hybridized valence band, which means the release of H atoms from TiHx during heating. On the other hand, the TiNy is epitaxially formed by the N-implantation into the hcp-Ti, through the epitaxial transformation of the hcp-Ti to fcc-Ti sublattice, partially inheriting the atomic arrangement of the hcp-Ti, and accompanying the occupation of O-sites of the transformed fcc-Ti by N atoms. The energy loss peak due to the plasmon excitation during N-implantation into the hcp-Ti films gradually shifts to the higher energy side with the increase in dose of N, which means the increase in the electron density in the hybridized valence band. By comparing the results of EELS with those of Rutherford Backscattering Spectrometry, it is clarified that the maximum concentration of N in Ti films during the N-implantation depends on the implantation temperature. The comparison between the results of EELS and those of the molecular orbital calculations elucidates that the changes of electronic structures near the Fermi level depend on the ratio of N/Ti in the films. Furthermore, taking into account the bonding interaction of Ti sublattices with ligand N atoms, the transformation mechanisms between hcp-Ti and TiNy due to the implantation of N atoms are proposed.

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Section: Introductionmentioning

confidence: 99%

In-situ Observation of Nitriding Processes of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope

Kasukabe

Chen

Yamamoto

et al. 2011

e-J. Surf. Sci. Nanotechnol.

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“…Titanium nitrides, TiN, formed by various techniques such as ion implantation, ion beam assisted deposition, magnetron sputtering, physical vapor deposition (PVD) and chemical vapor deposition (CVD), belong to the group of refractory compounds and have covalent property as well as metallic and ionic properties, which make it fascinating for both fundamental research and technological applications such as hard coatings and as diffusion barriers in microcircuits [1][2][3][4][5][6][7][8][9][10][11][12][13]. The great hardness is typical of compounds with strong covalent bonds [2,4], while the metallic properties result in good electrical conductivity [6][7][8][9][10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

“…The great hardness is typical of compounds with strong covalent bonds [2,4], while the metallic properties result in good electrical conductivity [6][7][8][9][10][11][12][13]. The interesting physical properties are related to the crystallographic (preferred oriented) and electronic structures.…”

Section: Introductionmentioning

confidence: 99%

“…Most of the experimental works to clarify the crystallographic and electronic structures were carried out using samples prepared in a separate vacuum system and transferred to the analysis chamber through air, and then cleaned using a combination of Ar + ion bombardment and heating cycles. These processes are known to change the surface e-Journal of Surface Science and Nanotechnology composition and structure, and to influence the electronic structure [9]. Therefore, for the investigation of the crystallographic and electronic structures of TiN films, insitu observations during the formation of TiN films by Nimplantation are performed in the TEM combined with ion accelerators.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of Deposited and Nitrogen-implanted Titanium Films

Wang

Yamamura

Yamamoto

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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Deposited Ti films and TiN films formed by nitrogen-implantation were investigated by transmission electron microscope (TEM) observation and electron energy loss spectroscopy (EELS). Titanium films in the thickness of 100 nm were deposited by an electron beam heating method onto thermally cleaned NaCl(001) surfaces held at room temperature under ultra-high vacuum. In the deposited Ti films, there coexist mainly (03 · 5)-oriented hcp-Ti and (110)

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“…The London magnetic penetration depth k L % 47 nm is determined from the measured n 0 and using a quasiparticle mass m Ã equal to 3 times the electron mass. 21 The BCS coherence length n 0 ¼ hv F pD % 120 nm is estimated a priori using a gap D ¼ 1:76 k B T C and a Fermi veloc-…”

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confidence: 99%

Homogeneous superconducting phase in TiN film: A complex impedance study

Diener

Schellevis

Baselmans

2012

Applied Physics Letters

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The low frequency complex impedance of a high resistivity 92 μ Ω cm and 100 nm thick TiN superconducting film has been measured via the transmission of several high sensitivity GHz microresonators, down to TC/50. The temperature dependence of the kinetic inductance follows closely BCS local electrodynamics, with one well defined superconducting gap. This evidences the recovery of a homogeneous superconducting phase in TiN far from the disorder and composition driven transitions. Additionally, we observe a linearity between resonator quality factor and frequency temperature changes, which can be described by a two fluid model.

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An estimate of the electron effective mass in titanium nitride using UPS and EELS

Cited by 38 publications

References 40 publications

In-situ Observation of Nitriding Processes of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope

In-situ Observation of Nitriding Processes of Deposited-Ti Thin Films due to Ion Implantation in an Analytical Transmission Electron Microscope

Characterization of Deposited and Nitrogen-implanted Titanium Films

Homogeneous superconducting phase in TiN film: A complex impedance study

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