An Excitation Time Model for General-purpose Memristance Tuning Circuit

Bunnam, Thanasin; Soltan, Ahmed; Sokolov, Danil; Yakovlev, Alex

doi:10.1109/iscas.2018.8351151

“…A safety gap must be allocated at each end to avoid the uncertainty of R on and R of f due to the process variation. Furthermore, the gap at the low memristance side should be widened to ensures the saturation (where the low memristance causes insufficient voltage for memristor programming) does not occur [50].…”

Section: B Data Range and Decodingmentioning

confidence: 99%

“…This is because the high memristance due to the low temperature causes insufficient voltage in the connected current mirror. In addition, the low memristance cannot dominate the impedance of the current mirror and results in the current saturation [50]. This needs the further investigation to find the proper solution.…”

Section: A Offsetmentioning

confidence: 99%

Toward Designing Thermally-Aware Memristance Decoder

Bunnam

¹

,

Soltan

²

,

Sokolov

³

et al. 2019

IEEE Trans. Circuits Syst. I

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Memristors are intensively proposed in many applications, such as biosensors and machine learning. Regarding their analog characteristics, memristance decoder is, therefore, an essential part for every memristor-based system. As memristor is a temperature sensitive device, this work proposes a memristance decoder circuit with self-temperature calibration. Its main building block is a comparator which is based on current mode circuit to achieve high performance at low power. The design provides configurable precision based on the available energy and supports both synchronous and asynchronous schemes. Moreover, the VTEAM model is modified to include the temperature effect on the memristance in the analysis. The simulation results, based on UMC 65nm low-leakage CMOS technology, show the following comparator's characteristics: 1.70% maximum offset, 2.91ns worst case latency, 343M Hz maximum frequency and 48.79f J maximum energy per comparison. Monte Carlo simulation shows the metastable state in determining the memristor value. This can be solved by extending the clock period or applying a metastability resolver. The proposed memristor model reveals that memristance at high resistive state degrades quadratically with the rise of the temperature and at 85°C nearly reaches the memristance of low resistive state. The possibility of decoding error due to the temperature effect is demonstrated via simulations.

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“…Indeed, the series resistor is an excellent "excess voltage absorber" as it prevents from overstressing and thus improves device endurance [16]. Some more recent works also studied the VD impact in bidirectional tuning circuits with a FET transistor as resistive element [17]. So, convinced about its utility and ease of use, in the work reported in this brief we build upon the theoretical analysis presented in [13] and demonstrate an experimental verification of the VD approach for accurate SET resistance tuning of memristors.…”

Section: Introductionmentioning

confidence: 99%

Voltage Divider for Self-Limited Analog State Programing of Memristors

Gomez

¹

,

Vourkas

²

,

Abusleme

³

et al. 2020

IEEE Trans. Circuits Syst. II

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Resistive switching devices -memristors -present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated here experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.

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“…Indeed, the series resistor is an excellent "excess voltage absorber" as it prevents from overstressing and thus improves device endurance [16]. Some more recent works also studied the VD impact in bidirectional tuning circuits with a FET transistor as resistive element [17]. From bottom (dark blue line) to top (dark red line) we simulate (1) for different RS values between 2kΩ and 20kΩ using VSET=0.45V and Rm ∈ [0.1, 5]kΩ.…”

Section: Introductionmentioning

confidence: 99%

Voltage Divider for Self-Limited Analog State Programing of Memristors

Vourkas

¹

,

Gomez

²

,

Abusleme

³

et al. 2020

2020 IEEE International Symposium on Circuits and Systems (ISCAS)

0

View full text Add to dashboard Cite

Resistive switching devices -memristors -present a tunable, incremental switching behavior. Tuning their state accurately, repeatedly and in a wide range, makes memristors well-suited for multi-level (ML) resistive memory cells and analog computing applications. In this brief, the tuning approach based on a memristor-resistor voltage divider (VD) is validated here experimentally using commercial memristors from Knowm Inc. and a custom circuit. Rapid and controllable multi-state SET tuning is shown with an appreciable range of different resistance values obtained as a function of the amplitude of the applied voltage pulse. The efficiency of the VD is finally compared against an adaptive pulse-based tuning protocol, in terms of circuit overhead, tuning precision, tuning time, and energy consumption, qualifying as a simple hardware solution for fast, reliable, and energy-efficient ML resistance tuning.

show abstract

An Excitation Time Model for General-purpose Memristance Tuning Circuit

Cited by 4 publications

References 21 publications

Toward Designing Thermally-Aware Memristance Decoder

Toward Designing Thermally-Aware Memristance Decoder

Voltage Divider for Self-Limited Analog State Programing of Memristors

Voltage Divider for Self-Limited Analog State Programing of Memristors

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