2016
DOI: 10.1021/acs.jpcc.6b02840
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An Experimental and Computational Study of β-AgVO3: Optical Properties and Formation of Ag Nanoparticles

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Cited by 54 publications
(53 citation statements)
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“…Since Ag 4 V 2 O 7 crystal is an n ‐ type semiconductor and oxygen vacancies ( V • O ) are already present, an n / p interface is created between the Ag NPs and Ag 4 V 2 O 7 crystals, thereby forming a semiconductor diode. A semiconductor diode has the valuable property that electrons only flow in one direction across it, and as a result, it acts as a rectifier …”
Section: Resultsmentioning
confidence: 99%
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“…Since Ag 4 V 2 O 7 crystal is an n ‐ type semiconductor and oxygen vacancies ( V • O ) are already present, an n / p interface is created between the Ag NPs and Ag 4 V 2 O 7 crystals, thereby forming a semiconductor diode. A semiconductor diode has the valuable property that electrons only flow in one direction across it, and as a result, it acts as a rectifier …”
Section: Resultsmentioning
confidence: 99%
“…A semiconductor diode has the valuable property that electrons only flow in one direction across it, and as a result, it acts as a rectifier. 10 Since the Ag growth on flower-like Ag 4 V 2 O 7 crystals can affect the electrical properties of the material, electrical resistance measurements were performed, and the results were evaluated as a function of the exposure time, ie, as a function of the growth of these metallic Ag nanoparticles. Figure 5 shows the variation in the electrical resistance of flower-like Ag 4 V 2 O 7 crystals subjected to electron beam irradiation at different exposure times.…”
Section: Resultsmentioning
confidence: 99%
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