An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Alim, Mohammad Abdul; Gaquière, C.; Crupi, Giovanni

doi:10.3390/mi12050549

Cited by 12 publications

(5 citation statements)

References 54 publications

(50 reference statements)

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“…Owing to their intrinsic features, Group III-nitride semiconductors such as GaN have captured the interest of industries as attractive compounds for optoelectronic, high-power, and high-frequency applications due to their inherent characteristics. Multiple semiconductor materials (e.g., GaN, GaAs, and SiC) have also been proven to be superior to silicon in radio-frequency (RF) and microwave applications [1][2][3].…”

Section: Introductionmentioning

confidence: 99%

GaN-HEMT Performance Enhancement

Fatma M. Mahmoud

2024

jes

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In this work, a simulation analysis and calibration are carried out to improve the performance of AlGaN/GaN- MOSHEMTs (Metal-Oxide Semiconductor High Electron Mobility Transistors). The effect of the AlGaN layer thickness, gate length, Al mole fraction, and the interface traps on the electrical performance of the device has been presented. Device simulations have been done using Sentaurus technology computer-aided design (TCAD). The simulations and analysis show better drain current, transconductance, and cut-off frequency performance. The maximum cut-off frequency shown by the proposed HEMT device is 45.7 GHz at 100-nm gate length. Good transcoductance has been obtained by scaling down the gate length of the device, which is ascribed to the present two-dimensional electron gas (2DEG) density that supports upgrading the output current. Higher drain current is achieved without using acceptor-like traps in the Al2O3/AlGaN interface. Results show that the Al2O3/AlGaN/GaN-based MOSHEMT is a promising device for high-frequency and power electronic applications.

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Section: Introductionmentioning

confidence: 99%

GaN-HEMT Performance Enhancement

Fatma M. Mahmoud

2024

jes

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“…The high electron mobility transistor (HEMT), based on aluminum gallium nitride/gallium nitride (AlGaN/GaN), is an important electronic component thanks to its structure and materials. Gallium nitride GaN is characterized by high mobility, very high electrical breakdown field and high thermal conductivity [5,6]. Thanks to these characteristics, these components have been used in different high-temperature and high-frequency applications [7,8], such as airborne systems, telecommunication and electronic warfare [9,10].…”

Section: Introductionmentioning

confidence: 99%

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

2021

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The main objective of our paper is to propose an approach to studying the mechatronic system’s reliability through the reliability of their high electron mobility transistors (HEMT). The operating temperature is one of the parameters that influences the characteristics of the transistor, especially the electron mobility that represents an advantage over other transistor’s families. Several factors can influence this temperature. Thanks to thermal modeling, it is possible to determine the factors representing a great impact on the operating temperature, such as the power dissipation at the active area of the transistor and the reference temperature above the substrate. In our reliability study, these analytical methods, such as First and Second Order Reliability Methods (FORM and SORM, respectively), were used to analyze the HEMT reliability. Thanks to the coupling between two models—the reliability model coded on Matlab and the thermal modeling with Comsol multiphysics software—the reliability index and the failure probability of the studied system were evaluated.

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“…Due to its wide bandgap properties, high electron mobility, and ability to function at high temperatures, AlGaN/GaN HEMT devices show promising features for the next generation of high frequency and high power applications. 1,2 Furthermore, for future wireless communication systems such as radar and base stations. GaN HEMTs are highly promising due to their outstanding low noise and high power performances at high frequencies.…”

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confidence: 99%

Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

Chen¹,

Yeh²,

Chen³

et al. 2023

ECS J. Solid State Sci. Technol.

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Device degradation due to hot carrier injection (HCI) in different Y-gate HEMT devices is thoroughly analyzed. To further understand the HCI reliability of the Y-gate HEMT devices, the device is fabricated with AlGaN/GaN structure with different top lengths (Ltop). An HCI stress time of 6000 seconds was conducted on these devices, while Vt stability in other stress time domains, leakage current, and transconductance degradation are also discussed. We have demonstrated that increasing the LTop length could avoid the virtual gate effect and disperse the influence of the electric field under HCI stress. Furthermore, the effects of trapping in various locations, such as in the bulk SiN or AlGaN/GaN interface has been discussed. These trapping effects caused by the HCI stress might be the source of the Vth shift. Overall, The large Y-gate HEMT showed the lowest degradation of DC characteristics after the long HCI stress test.

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An Experimental and Systematic Insight into the Temperature Sensitivity for a 0.15-µm Gate-Length HEMT Based on the GaN Technology

Cited by 12 publications

References 54 publications

GaN-HEMT Performance Enhancement

GaN-HEMT Performance Enhancement

Electrothermal Reliability of the High Electron Mobility Transistor (HEMT)

Hot Carrier Injection (HCI) Reliability of Fabricated Y-gate HEMT with Various Top Length

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