An experimental estimation of silicon interstitial diffusivity

Abstract

A relatively simple experimental method to estimate a diffusivity of silicon interstitials is described. In the low-temperature range between 460 and 500 °C, oxygen thermal donors are used as a monitor for silicon interstitials. The estimated diffusivity of silicon interstitials at oxygen-donor-formation temperatures is fitted to previously-published results from oxidation-enhanced and retarded-diffusion experiments at temperatures above 950 °C. In the temperature range between 460 and 1200 °C, the diffusivity of silicon interstitials is described by the Arrhenius equation, Di=3.35×10−1 exp(−1.86/kT) cm2/s.

Pair diffusion and kick‐out: Contributions to diffusion of boron in silicon

“…The low value was tentatively attributed to enhancements resulting from the irradiation procedure. Wijaranakula reported a large activation energy of 180 kJ/mol (1.86 eV), 48 based on experiments where oxygen donors were used to trace Si interstitial motion. Neither experimental study indicated the charge state of the Si i .…”

Fast diffusion mechanism of silicon tri-interstitial defects

“…Measurements of the diffusion rate of defects in silicon have been reported in experiments. [8][9][10][11][12][13][14] Current experimental techniques cannot cleanly resolve the diffusion rates of more complex defect species, and due to the atomicscale size of point defects, defect diffusion pathways cannot be resolved at all. 15 Thus, numerical simulations provide a unique way to study the technologically important dynamics of point defects in silicon.…”

Depth Profiles of Thermal Donors in Czochralski-Grown N-Type Silicon

“…The sample is MCZ3 subjected to annealing at 4500C for 24 h. TD concentrations are found to increase with depth as already reported [6,8,9]. TD depth profiles were fitted to the error function equation [8] TD(x)=TDS + (TDB -TDs)erf(x/2DTDt) ()…”

“…TD depth profiles were fitted to the error function equation [8] TD(x)=TDS + (TDB -TDs)erf(x/2DTDt) ()…”

“…Wijaranakula [8] has fitted TD depth profiles to the error function equation and determined the diffusivity of silicon interstitials to be on the order of ix10-1 3 -1.3x10-1 3 cm 2 /s at TD formation temperatures between 460 and 500*C for 100 h. Thus, it seems still controversial whether TD formation is related to the diffusion of interstitial oxygen or interstitial silicon.…”