An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

Gavrina, P. S.; Soboleva, O. S.; Podoskin, A. A.; Romanovich, D. N.; Golovin, V. S.; Сліпченко, С. О.; Pikhtin, N. A.; Bagaev, T. A.; Ладугин, М. А.; Маrmalyuk, А. А.; Симаков, В. А.

doi:10.1134/s1063785019040254

Cited by 5 publications

(2 citation statements)

References 9 publications

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“…Временное разрешение будет зависеть от используемой измерительной аппаратуры, в нашем случае оно составляло 1 нс. Подобная методика применялась в [6,7] для оценки средних внутренних оптических потерь в мощных полупроводниковых лазерах, а также для выявления положения и размеров токовых шнуров в полупроводниковых лазерах-тиристорах полосковой конструкции [12].…”

Section: методика и экспериментальная схема измеренийunclassified

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Гаврина¹,

Соболева²,

Подоскин³

et al. 2020

Физика И Техника Полупроводников

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The spatiotemporal dynamics of optical losses and carrier density in a heterostructure of a semiconductor laser with a segmented contact were studied using an optical probe technique based on the coupling of probe radiation with a wavelength of 1560 nm into a semiconductor laser chip under investigation based on an AlGaAs/ InGaAs/ GaAs heterostructure and emitting at a wavelength of 1010 nm. It has been shown that the use of a probe beam with a wavelength of 1560 nm makes it possible to ensure the sensitivity of the measurement of internal optical losses of no worse than 1 cm-1. The use of a segmented design of the current pumping region made it possible to estimate the absolute value of internal optical losses. It was shown that a change in the configuration of the Fabry-Perot eigenmodes of the laser affects the distribution of charge carriers and internal optical losses both in the current pump region and in the passive part of the laser chip that is not pumped by the current.

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Section: методика и экспериментальная схема измеренийunclassified

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Гаврина¹,

Соболева²,

Подоскин³

et al. 2020

Физика И Техника Полупроводников

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“…Building upon these advantages, it is crucial to further enhance the triggering current capability and dynamic characteristics of thyristor chips, which will de ne their future development [1] . As the fundamental solution primarily relies on the design of their chip structure, the center-gate and multilayer P/N-type semiconductor design are currently considered the most favorable design approaches [2] .…”

Section: Introductionmentioning

confidence: 99%

Preparation and Application of Novel Power Semiconductor Chips

Zhiwei,

Abas

2024

Preprint

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The power semiconductor industry, as the cornerstone of the information industry, has become an important indicator for measuring the technological level and development scale competitiveness of an industry, and is also an indispensable part of the energy industry. In order to promote the development of the semiconductor industry and enhance its innovation capabilities and competitiveness, it is necessary to seize the development opportunities in the semiconductor chip market. Therefore, based on elucidating the development direction of thyristor chip structure design, novel gate-level structures and multilayer semiconductor structures have been designed with the aim of improving the triggering current and dynamic characteristics of thyristor chips.

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Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures

Gavrina

Podoskin

Shushkanov

et al. 2022

2022 International Conference Laser Optics (ICLO)

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An Experimental Investigation of the Dynamics of On-State Propagation in Low-Voltage Laser Thyristors Based on AlGaAs/InGaAs/GaAs Heterostructures

Cited by 5 publications

References 9 publications

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Исследование Пространственной И Токовой Динамики Оптических Потерь В Полупроводниковых Лазерных Гетероструктурах Методом Оптического Зондирования

Preparation and Application of Novel Power Semiconductor Chips

Effect of current localization on the output optical power in high-power laser-thyristors based on AlGaAs/GaAs/InGaAs heterostructures

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