An Experimental Investigation of the Degradation of CMOS Low-Noise Amplifier Specifications at Different Temperatures

Abstract

To investigate the relationship between the specifications degradation of a low-noise amplifier (LNA) and temperature, we experimentally investigated the degradation characteristics of the specifications of the LNA at different temperatures. The small-signal gain (S21) of the LNA decreases with increasing temperature. This paper discusses and analyzes the experimental results in detail, and the reasons for the degradation of LNA specifications with temperature changes are known. Finally, we have tried to use the structure already available in the literature for the PA temperature compensation circuit for the temperature compensation of the LNA. The results show that the existing circuit structure for PA temperature compensation in the literature can also effectively compensate for the S21 and NF degradation of the LNA due to the temperature increase.

Thermal Characteristic Investigation for a Multichip Module Based on APDL

“…Therefore, temperature, stress, and deformation of MCM under different powers and temperatures are analyzed here. In details, the thermal characteristic analysis for MCM is divided into two parts: thermal analysis and thermal stress analysis [17]. Meanwhile, the automatic finite element solution can be achieved by APDL command flow.…”

“…In addition, the temperature impact for IC reliability cannot be ignored. The higher the temperature, the smaller the reliability and lifetime of chip [17]. Therefore, it is necessary to focus on the thermal characteristics of MCM.…”

“…From the perspective of thermal characteristics, it is mainly related to temperature distribution and thermal expansion coefficient and its structure. As long as the mechanical response of the object does not affect the thermal performance and boundary conditions, thermal analysis can be decomposed into temperature analysis and structural static analysis [17]. As a result, the heat transfer equation in the steady-state system can be expressed as…”

Temperature behavior modeling based on resilient BPNN for a GaAs pHEMT high gain MMIC PA

“…However, the methods presented in similar literatures all need much measurement time to obtain the performance varitions 6,12,13,15 . This drawback causes the characteristics to be studied only at certain temperatures 6,10–16 . Moreover, considering the limitation of experimental devices, it is almost impossible to measure all the data.…”