An Experimental Investigation of the Tradeoff between Switching Losses and EMI Generation With Hard-Switched All-Si, Si-SiC, and All-SiC Device Combinations

Reduction of oscillations in a GaN bridge leg using active gate driving with sub-ns resolution, arbitrary gate-resistance patterns

“…During operation, the Xilinx system also provides the PWM demand signal. MATLAB, running on the host PC, configures the 4 GHz, 10 GSa/s Rhode & Schwarz RTO1044 oscilloscope to trigger on 2 rising edges, and capture and average 8,192 consecutive waveforms in order to lower the measurement noise floor [4]. The process is repeated for 2 falling edges.…”

“…Active gate driving has been demonstrated with all types of MOSgated silicon devices, usually with the intention of controlling ⁄ and ⁄ [1], for example to allow dynamic voltage sharing of seriesed devices [2], and to reduce voltage overshoots [3] or EMI [1], [4]- [7]. It has been shown that by applying carefully shaped waveforms to the gate of silicon IGBTs, EMI is reduced without increasing switching loss [5].…”

Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET)

“…In [31], it was noticed that SiC based devices leads to an increased electromagnetic interference (EMI) production level. In addition, according to [31] SiC based circuits can record switching loss decrease of up to 70% in a comparison with the switching losses of Si, Si-SiC and SiC device combinations.…”

“…In addition, according to [31] SiC based circuits can record switching loss decrease of up to 70% in a comparison with the switching losses of Si, Si-SiC and SiC device combinations. It can pave way for the application of SiC JFET in low-voltage industrial variable-speed drives of 1200 V SiC-based devices, currently dominated by Si IGBTs and diodes.…”

Experimental Comparison of a Direct Matrix Converter Using Si IGBT and SiC MOSFETs

“…In that work it was demonstrated that the use of fast switching power devices allows a considerable reduction in the overall volume of the power converter passive components as well as the importance of an appropriate layout of the power circuit in order to limit EMI issues and device stress, which can both result from high switching speeds. From a power device point of view extensive studies in [17] have been conducted to evaluate the switching performance of all Si, combined Si-SiC arrangements and all SiC commutation cells together with potential routes to the adoption of SiC technologies.…”