An Experimental study of some Physical properties on Gallium Antimonide Nanocrystals

Abstract

This study includes preparing Nano-thin films of gallium antimonide (GaSb) and study the physical properties of this films. These films are prepared by using a vacuum evaporation technique with pressure (10−6 Torr). They were deposited on glass substrates. After the preparation process, some of its optical and structural properties, such as (energy gap, optical absorption, AFM, SEM and XRD) were studied. By discussing the results, it was found that the prepared GaSb thin films have worthwhile structural and optical properties. These properties can be used in the preparation and manufacture of infrared devices, laser detectors and photoelectric applications. The distinguished obtained characteristics are of interest to a large number of researchers within the fields of semiconducting materials. The potential applications that could employ GaSb Nano-thin films in their work are infrared devices and wide range applications of detectors and photo electronics. For example, Li-Fi technology, which relies on visible light as a means of transmitting data instead of radio frequencies, in addition to it does not generate any radiation as in Wi-Fi, as it ultimately depends on visible light.

Basic Characteristics of Gallium Indium Arsenide Antimonide (GaxIn1 – xAsySb1 – y) Semiconductors Using MATLAB

“…1a) and indium arsenide (InAs, Fig. 1b), their energy band gaps Eg are 0.726 eV [19,20] and 0.354 eV [19] at T  300 K, respectively, they have a zincblende crystal structure. The following expression presents the energy gap Eg as a function of x for GaxIn1 -xAsySb1 -y compositions lattice-matched to GaSb (Eq.…”