Abstract:Many proposed applications of graphene require the ability to tune its electronic structure at the nanoscale. Although charge transfer and field-effect doping can be applied to manipulate charge carrier concentrations, using them to achieve nanoscale control remains a challenge. An alternative approach is 'self-doping', in which extended defects are introduced into the graphene lattice. The controlled engineering of these defects represents a viable approach to creation and nanoscale control of one-dimensional… Show more
“…One example is a domain boundary which has been observed to appear due to lattice mismatch in graphene grown on a Ni surface. 73 This defect consists of an alternating line of pairs of pentagons separated by octagons (Figure 7c). Obviously, such a defect can be formed by aligning (5-8-5) divacancies along the zigzag lattice direction of graphene.…”
Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth or processing, deteriorate the performance of graphenebased devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed. Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices with dedicated properties are also discussed.
“…One example is a domain boundary which has been observed to appear due to lattice mismatch in graphene grown on a Ni surface. 73 This defect consists of an alternating line of pairs of pentagons separated by octagons (Figure 7c). Obviously, such a defect can be formed by aligning (5-8-5) divacancies along the zigzag lattice direction of graphene.…”
Graphene is one of the most promising materials in nanotechnology. The electronic and mechanical properties of graphene samples with high perfection of the atomic lattice are outstanding, but structural defects, which may appear during growth or processing, deteriorate the performance of graphenebased devices. However, deviations from perfection can be useful in some applications, as they make it possible to tailor the local properties of graphene and to achieve new functionalities. In this article, the present knowledge about point and line defects in graphene are reviewed. Particular emphasis is put on the unique ability of graphene to reconstruct its lattice around intrinsic defects, leading to interesting effects and potential applications. Extrinsic defects such as foreign atoms which are of equally high importance for designing graphene-based devices with dedicated properties are also discussed.
“…10.1080/14686996.2018.1494493-F0013Figure 13.Configurations of (a) the θ = 21.8° and (b) the θ = 32.2° symmetric large-angle GBs, respectively [137]. (c) STM image of a regular line defect in graphene on the Ni(111) [208]. (d) Aberration-corrected annular ADF-STEM image of two grains which intersect with a relative rotation of 27°, and are stitched together by an aperiodic line of dislocations [209].…”
Section: Disorders In Graphene Structurementioning
confidence: 99%
“…(c) STM image of a regular line defect in graphene on the Ni(111) [208]. (d) Aberration-corrected annular ADF-STEM image of two grains which intersect with a relative rotation of 27°, and are stitched together by an aperiodic line of dislocations [209].…”
Section: Disorders In Graphene Structurementioning
confidence: 99%
“…It is evidenced from the atomically resolved STM image (see Figure 13(c)) of a regular line defect in graphene on the Ni(111) that only three atoms rather than all six atoms are visible in the hexagonal lattice, which is attributed to the two diverse adsorption sites of carbon atoms on the Ni substrate [208]. It is noted that this line defect consists of one octagon and a pair of pentagons.…”
Section: Disorders In Graphene Structurementioning
confidence: 99%
“…Recent study [254] also suggested that increasing grain size would be an inefficient way to improve the electrical conductivity of graphene when the grain size is larger than 1 μm. Intriguingly, because of a large number conducting channels along the grain-boundary line, the conductivity in this direction may be enhanced [208]. …”
Section: Disorders In Graphene Structurementioning
Monolayer graphene exhibits extraordinary properties owing to the unique, regular arrangement of atoms in it. However, graphene is usually modified for specific applications, which introduces disorder. This article presents details of graphene structure, including sp2 hybridization, critical parameters of the unit cell, formation of σ and π bonds, electronic band structure, edge orientations, and the number and stacking order of graphene layers. We also discuss topics related to the creation and configuration of disorders in graphene, such as corrugations, topological defects, vacancies, adatoms and sp3-defects. The effects of these disorders on the electrical, thermal, chemical and mechanical properties of graphene are analyzed subsequently. Finally, we review previous work on the modulation of structural defects in graphene for specific applications.
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