An Extended Multilayer Thermal Model for Multichip IGBT Modules Considering Thermal Aging

Akbari, Mohsen; Bina, Mohammad Tavakoli; Bahman, Amir Sajjad; Eskandari, Bahman; Pouresmaeil, Edris; Blaabjerg, Frede

doi:10.1109/access.2021.3083063

Cited by 17 publications

(3 citation statements)

References 33 publications

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“…18 for the primary winding. Every subcircuit contains many parallel resistance and capacitance cells to form a Foster network [56]. The first and the second subcircuits (Fig.…”

Section: ) Compact Thermal Networkmentioning

confidence: 99%

Thermal Modeling of Planar Magnetics: Fundamentals, Review and Key Points

2023

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High-frequency and high-power density converters are essential for many applications such as automotive and more electric aircraft. To improve power density, planar magnetic components are increasingly used in power electronic converters owing to their advantages, such as less high-frequency losses, repeatability, and better thermal performance compared to conventional wound components. Considerable attention has been paid to their electrical performance. However, the thermal aspects are essential for enhancing completely their performance. Currently, there is an increasing interest in these critical aspects of high-density power converters. This paper presents a literature review of studies on the thermal modeling of planar magnetics. The papers were organized according to the model type and analyzed to highlight their merits and limitations. A multicriteria comparison of the studied papers was performed. Moreover, the key points and issues related to the thermal modeling are addressed to guide designers in enhancing the thermal aspects of planar magnetic components.INDEX TERMS Planar magnetics, High frequency magnetics, Thermal modeling, high power density.

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“…18 for the primary winding. Every subcircuit contains many parallel resistance and capacitance cells to form a Foster network [56]. The first and the second subcircuits (Fig.…”

Section: ) Compact Thermal Networkmentioning

confidence: 99%

Thermal Modeling of Planar Magnetics: Fundamentals, Review and Key Points

2023

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“…For instance, commercial IGBT chips are usually coated with silver solder layers by manufacturers, which significantly decrease its surface emissivity. As such, the surface temperature of the IGBT chip could not be correctly measured by the IRC as reported in [ 63 ]. Nevertheless, we can characterize the surface emissivity considering the blackbody and infrared radiation discussed in [ 64 ] as:

where R T 1 and R T 2 are the infrared emission levels at known temperatures, T 1 and T 2, and R b 1 and R b 2 are the equivalent black body emission levels.…”

Section: Junction Temperature Optical Sensing Techniquesmentioning

confidence: 99%

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Isa,

Mirza,

Ghafoor

et al. 2023

Micromachines

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Recent advancements in power electronic switches provide effective control and operational stability of power grid systems. Junction temperature is a crucial parameter of power-switching semiconductor devices, which needs monitoring to facilitate reliable operation and thermal control of power electronics circuits and ensure reliable performance. Over the years, various junction temperature measurement techniques have been developed, engaging both non-optical and optical-based methods, highlighting their advancements and challenges. This review focuses on several optical sensing-based junction temperature measuring techniques used for power-switching devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated-gate bipolar transistors (IGBTs). A comprehensive summary of recent developments in infrared camera (IRC), thermal sensitive optical parameter (TSOP), and fiber Bragg grating (FBG) temperature sensing techniques is provided, shedding light on their merits and challenges while providing a few possible future solutions. In addition, calibration methods and remedies for obtaining accurate measurements are discussed, thus providing better insight and directions for future research.

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“…The thermal parameters (thermal resistance and thermal capacitance) of the Foster thermal network model are relatively easy to obtain. The commonly used method is to calculate the transient thermal impedance curve of the IGBT module by using FE analysis and to obtain the thermal parameters of the Foster thermal network model by directly fitting the curve [20][21][22]. In addition, based on the thermal parameters given by the IGBT module supplier, the Foster thermal network model can also be directly established [23].…”

Section: Introductionmentioning

confidence: 99%

Comparative Study of the Parameter Acquisition Methods for the Cauer Thermal Network Model of an IGBT Module

Zhou

Qin

et al. 2023

Electronics

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Under the operating conditions of high power and high switching frequency, an insulated gate bipolar transistor (IGBT) chip can produce relatively large power loss, causing the junction temperature to rise rapidly; consequently, the reliability of the IGBT module can be seriously affected. Therefore, it is necessary to accurately predict the junction temperature of the IGBT chip. The resistance capacitance (RC) thermal network model is a commonly used method for IGBT junction temperature prediction. In this paper, the model parameters are obtained by two methods to establish the Cauer thermal network models of the IGBT module. The first method is to experimentally obtain the transient thermal impedance curve of the IGBT module and the structure function and then extract the individual thermal parameters of the Cauer thermal network model; the second method is to obtain the thermal parameters of the thermal network model directly by using theoretical formulas that consider the influence of the heat spreading angle. The predicted junction temperatures of the Cauer thermal network models established by the two methods are compared with the junction temperatures obtained from infrared (IR) measurements during the power cycling test, the junction temperatures measured by the temperature-sensitive electrical parameter (TSEP) method, and the junction temperatures calculated by finite element (FE) analysis. Additionally, the Cauer thermal network models established by the two methods are compared and verified. The results indicate that the Cauer thermal network model established based on theoretical formulas can accurately predict the maximum junction temperature of the IGBT chip, and the calculated temperature for each layer, from the IGBT chip layer to the ceramic layer, also accords well with the FE results. The Cauer thermal network model established based on the experimental test and the structure function can accurately predict the average junction temperature of the IGBT chip.

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An Extended Multilayer Thermal Model for Multichip IGBT Modules Considering Thermal Aging

Cited by 17 publications

References 33 publications

Thermal Modeling of Planar Magnetics: Fundamentals, Review and Key Points

Thermal Modeling of Planar Magnetics: Fundamentals, Review and Key Points

Junction Temperature Optical Sensing Techniques for Power Switching Semiconductors: A Review

Comparative Study of the Parameter Acquisition Methods for the Cauer Thermal Network Model of an IGBT Module

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