2024
DOI: 10.1002/pssa.202300783
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An Extended Temperature Model Based on the Trapping Effect for Drain‐Source Current in GaN HEMTs

Wenwei Wu,
Ruohe Yao,
Yurong Liu
et al.

Abstract: In this work, an extended temperature current–voltage (I–V) model for AlGaN/GaN high electron mobility transistors (HEMTs) is proposed. Since there is no carrier freeze‐out effect in GaN HEMTs, the current density, switching characteristics, and heat dissipation performance are significantly improved with the decrease in temperature. The threshold voltage drift phenomenon can be accurately described at various temperatures by the trapping effect control potential model. Based on Matthiessen's law, the applicab… Show more

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