An FTIR study of the heteroepitaxy of diamond on silicon

Graham, C. D.; Milne, David; Jubber, M. G.; Wilson, J.I.B.

doi:10.1016/0925-9635(95)00467-x

Cited by 12 publications

(3 citation statements)

References 17 publications

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“…Hydrogen atoms bound to the sp 2 carbon atoms yield C−H vibrations around 880, 820, and 760 cm -1 . ,, These vibrations are clearly visible in the spectra of the films grown with higher precursor pressures, as shown in Figure , but are relatively weak in the spectra of the films grown at higher substrate temperatures with lower precursor pressures, as presented in Figure . The Si−C stretching vibration is observed around 780 cm -1 . ,, …”

Section: Resultsmentioning

confidence: 98%

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Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)

Hukka

Zhang

2000

J. Phys. Chem. B

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Amorphous carbon (a-C) films with low hydrogen content were deposited at low substrate temperatures from a chlorinated hydrocarbon (CH 3 Cl) by photoinduced chemical vapor deposition with a fluorine laser (157 nm). The optical gap, as determined by photothermal deflection spectroscopy (PDS), decreased from 2.3 to 0.1 eV when the substrate temperature was increased from 303 to 643 K. The films were further characterized by FTIR spectroscopy, micro-Raman spectroscopy, surface acoustic wave spectroscopy (SAWS), and atomic force microscopy (AFM). The presence of chlorine residues in the films was examined by energy-dispersive X-ray fluorescence (EDXRF) spectroscopy. The amount of chlorine decreased significantly between 493 and 518 K, causing the carbon network to restructure into a more graphitic form. Deposition at 643 K produced a chlorine-free a-C film on the quartz substrate.

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Section: Resultsmentioning

confidence: 98%

“…The Si-C stretching vibration is observed around 780 cm -1 . 39,40,41 Several peaks appear in the region 500-650 cm -1 . For example, there are two FTIR absorbance frequencies at the ranges 501-509 and 560-586 cm -1 .…”

Section: Resultsmentioning

confidence: 98%

Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)

Hukka

Zhang

2000

J. Phys. Chem. B

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“…According to refs. [8,[15][16][17][18][19][20][21][22][23][24], when the diamond films were deposited on the (100) crystal plane of silicon substrate, all the obtained films had the highly oriented (100) crystal plane of diamond or the epitaxial (100) crystal plane of diamond. While according to refs.…”

Section: Relative Electron Density Difference Of Interface and Its Rementioning

confidence: 99%

Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface

Qin

2007

SCI CHINA SER E

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Diamond and cubic boron nitride films have already been applied practically because of their excellent properties. The specific orientations of the films have special meaning on their application in optics and microelectronics fields. In this paper, the relative electron density differences of the interface between the different crystal planes of silicon substrate and those of diamond and cubic boron films are calculated with the empirical electron theory in solids and molecules. Analyses on the calculation results show that in the range of the researched films, the smaller the relative electron density difference between the film and the substrate is, the stabler the film is in thermodynamics. Therefore, the electron density difference is the essential factor of determining the orientation of the texture and heteroepitaxy of the films. The deductions accord well with the experimental facts. The calculation methods and the theory not only provide a new angle of view for the research of the growth mechanism of diamond film and cubic boron nitride film on the silicon substrate, but also provide a possible direction for the prediction of the orientation of other films. films, interface electron density, texture, heteroepitaxy, diamond, cubic boron nitride

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Diamond Films

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An FTIR study of the heteroepitaxy of diamond on silicon

Cited by 12 publications

References 17 publications

Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)

Photoinduced Chemical Vapor Deposition of Amorphous Carbon Films from Chloromethane Using a VUV Laser (157 nm)

Relationship between the orientation of texture and heteroepitaxy of diamond and related materials films on silicon single crystal and the valence electron structure of the interface

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