2013
DOI: 10.1002/pip.2345
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An improved circuit model for polymer solar cells

Abstract: Authenticity of conventional circuit model, to interpret the characteristics of polymer solar cells (PSCs) is examined. Conventional circuit model is found to be quite limited, and various assumptions used there are not valid for PSCs. By understanding the nature of photovoltaic characteristics, through detailed investigations, we developed an improved circuit model, which explains correctly the behavior of PSCs under different environmental conditions. Investigations are carried out on the solar cells, made o… Show more

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Cited by 23 publications
(25 citation statements)
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“…As the physics of PSCs is different, consideration of conventional solar cell model for PSCs is unphysical. Very recently, we have developed a model, which explains correctly the behavior of PSCs . For modeling of PSCs, the active organic layer was considered to be a single semiconductor with HOMO of the donor and LUMO of the acceptor, with hole mobility equal to that of donor and electron mobility equal to that of acceptor molecules.…”
Section: Resultsmentioning
confidence: 99%
See 2 more Smart Citations
“…As the physics of PSCs is different, consideration of conventional solar cell model for PSCs is unphysical. Very recently, we have developed a model, which explains correctly the behavior of PSCs . For modeling of PSCs, the active organic layer was considered to be a single semiconductor with HOMO of the donor and LUMO of the acceptor, with hole mobility equal to that of donor and electron mobility equal to that of acceptor molecules.…”
Section: Resultsmentioning
confidence: 99%
“…We found that the dark characteristics could be explained by considering two diodes D1 and D2 connected in parallel together in opposite polarity along with shunt and series resistances (see inset (a) of Fig. ) and the J–V relation could be written as, leftJ=Js1VJARsexpq()VitalicJARsn1italickT1leftJs2expq()VitalicJARsn2italickT1+VJARsARpJitalicphV,where J s 1 ( V‐JAR s ) and J s 2 are, respectively, the reverse bias current densities in the two diodes, n 1 and n 2 are their ideality factors, R s and R p are, respectively, the parasitic series and shunt resistances. J s 1 ( V‐JAR s ) depends on the charge carrier mobilities, effective density of states, interface barriers for charge carrier injection, V bi and the sample thickness.…”
Section: Resultsmentioning
confidence: 99%
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“…The same phenomenon was also observed by other groups that the R P will decrease after increasing illumination intensity. 20,24,39 This phenomenon not only indicates that R P should not be a fixedvalue resistance, but also reveals that the current leakage through short-circuit channels is only a small proportion of the total J leak . Considering there is a charge collection process for the separated charges transport to the electrode, Hecht equation was used to modify the leak current item.…”
Section: Model Simulatingmentioning
confidence: 95%
“…Herein, formulating equations in term of semiconductor theory to simulate the current-voltage characteristics becomes a very useful way to reveal these current losses. [18][19][20] So far several models such as one-diode model 19 , two-diode model 21 , three-diode model 22 and any other models [23][24][25] have been built to describe various photovoltaic systems. In our previous work, we reported two small molecules for photovoltaic application named DR3TBDTT-HD and DR3TBDT2T ( Fig.…”
Section: Introductionmentioning
confidence: 99%