2001
DOI: 10.1143/jjap.40.l7
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An Improved In0.34Al0.66As0.85Sb0.15/InP Heterostructure Utilizing Coupled δ-Doping InP Channel

Abstract: A coupled δ-doped In0.34Al0.66As0.85Sb0.15/InP heterostructure field-effect transistor (HFET) has been successfully grown by metalorganic chemical vapor deposition. Electron mobilities can be enhanced without sacrificing the carrier densities. An extremely low gate reverse leakage current of 111 µA/mm at V gs=-40 V is achieved. The three-terminal on- and off-state breakdown voltages are as high as 40.8 V and 16.1 V, respectively. These characteristics are attributed to the use of the coupled … Show more

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