An Improved Noise Model for SiGe HBT With an Inductive Breakdown Network in the Avalanche Region

Noise Parameter Analysis of SiGe HBTs for Different Sizes in the Breakdown Region

“…The RF noise model including the inductive breakdown network is also presented. Although this noise model presented here for the sake of completeness is the same as [11], this work further extends to noise characterization for different sizes. using DC measurements for a fixed device size as shown in Table 1.…”

“…In Figure 1, the SiGe HBT noise model for the presented investigation of noise parameter dependence on device size at breakdown is shown. Although the equivalent circuit model can be referred to [11], the description of each element is presented here for the sake of completeness. The avalanche noise sources 2 ava, and 2 ava, in the breakdown network are employed to describe the excess noise originated from random phenomena of the electron and hole avalanche multiplication mechanism, respectively.…”

“…The avalanche noise sources 2 ava, and 2 ava, in the breakdown network are employed to describe the excess noise originated from random phenomena of the electron and hole avalanche multiplication mechanism, respectively. The noise spectral density is given as [11]…”

“…Our previous research focused on breakdown noise modeling for SiGe HBTs [11]. In this work, we extend to the analysis of device geometry of noise parameters for SiGe HBTs in the avalanche region.…”