An improved planar-gate triode with CNTs field emitters by electrophoretic deposition

Electrophoretic deposition of carbon nanotubes: recent progress and remaining challenges

“…Finally, various types of surfactants can be added to enhance the stabilisation of CNT dispersions, such as sodium dodecyl sulphate (SDS) [63,[111][112][113][114][115], hexadecyl trimethyl ammonium bromide (CTAB) [63,116], trioctylphosphine oxide (TOPO) [63], triethanolamine (TEA) [67], poly(vinyl butyral) (PVB) [59], ethyl cellulose [117], polyethyleneimine (PEI) [74], ribonucleic acid (RNA) [115], Triton X [118][119][120][121][122][123][124][125], stearyl ether [126], TNWDIS [9,127], Darvan C [128,129], Nanosperse-AQ™ [130], tetramethylammonium (TMAH) [124,125]. A detailed overview can be found in Tables S1-S3 (supporting information).…”

“…After EPD over the whole substrate, from an Ni-ion containing ethanol solvent, the CNTs deposited on the photoresist lines were selectively lifted-off by ultrasonication, while the CNTs on the ITO areas remained immobilised in Ni metal layer co-deposited on the ITO ( Figure 5). A similar process using a more sophisticated patterning scheme has been applied to selectively deposit CNT field emitters [117]. CNTs selectively deposited on a silver mesh served as a protective layer against oxidation increasing the stability of the electrode [142].…”

Enhanced field electron emission properties of hierarchically structured MWCNT-based cold cathodes

“…In this context, researchers have proposed different approaches, including strategies to increase the aspect ratio of the nanotubes (Jo et al [ 10 ]), to chemically functionalize them (Jha et al [ 11 ]) or to tailor their growth sites through patterning techniques (Hazra et al [ 12 ]). In particular, to reduce the threshold field and thereby the power consumption of the FEE devices, microfabrication techniques were often used and shown to be effective in reaching reasonably low TF values (in the 2 to 3 V/μm range) (Zhang et al [ 13 ]; Sanborn et al [ 14 ]; Choi et al [ 5 ]). Such microfabrication-based approaches, though they enable precise microtailoring of the shape of emitting tips, are costly and involve relatively complex multi-step plasma processing.…”

Efficient surface-conduction field emission electron sources from tin oxide film

“…Further, in the field of vacuum micro-and nano electronics [4e7], field emitter arrays (FEAs), integrated with microscale and nanoscale field-emission-type electron sources, have been developed for various applications using the advantage of field emission electron beams, such as field emission displays [8,9], field emission lamps [10,11], small X-ray sources [12e14], high-frequency devices [15], and electric power switching devices [16,17]. To date, semiconductor nanofabrication processes have been used to fabricate different types of field emission electron sources to achieve better FE characteristics and stability, such as the Spindt type [18] and Si type [19] which were suitable for mass production, normal-gate type [20,21], under-gate type [22,23], planar-gate type [24,25] and surface-conduction field emission electron sources [26e28]. Compared with other electron sources, the surface-conduction field emission electron sources based on a planar-gate-type triode have many advantages such as simple structure and fabrication processes, which have been paid much attention due to a lower driving voltage and excellent field emission characteristics.…”