2001
DOI: 10.1016/s0924-4247(00)00546-x
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An improved TMAH Si-etching solution without attacking exposed aluminum

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Cited by 95 publications
(45 citation statements)
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“…In this work RIE etching method was used instead of Tetra Methyl Ammonium Hydroxide (TMAH) etching method [6] …”
Section: Iosr Journal Of Electronics and Communication Engineering (Imentioning
confidence: 99%
“…In this work RIE etching method was used instead of Tetra Methyl Ammonium Hydroxide (TMAH) etching method [6] …”
Section: Iosr Journal Of Electronics and Communication Engineering (Imentioning
confidence: 99%
“…A dip of 150 seconds in BOE (Buffered Oxide Etch) was found to effectively remove the oxide layer. And then the MHP membrane was immediately released by bulk silicon etching without attacking the exposed aluminum using a 5 wt.% TMAH (Tetramethyl Ammonium Hydroxide) dual doped with 1.6 wt.% Si powder and 0.5 wt.% (NH 4 ) 2 S 2 O 8 at 85 • C, 20,21 as shown in Fig. 1(d) and Fig.…”
Section: B Post-cmos Processesmentioning
confidence: 99%
“…Then, an anisotropic etching process was performed on the chip using TMAHW, following several formulations that increase the selectivity of the TMAH to avoid damage to the exposed aluminium on the chip caused by the etching solution (Fujitsuka et al, 2004;Sullivan et al, 2000;Yan et al, 2001). The next figures show the fabricated chip after a TMAHW etching process.…”
Section: Geometry and Optimization Of The Suspended Membranesmentioning
confidence: 99%