2015
DOI: 10.1117/12.2085606
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An improved virtual aberration model to simulate mask 3D and resist effects

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Cited by 3 publications
(2 citation statements)
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“…With advanced design nodes below 45 nm the mask 3D effects have become more pronounced. It is observed that in dense structure regions using oblique illumination and an attenuated phase shifting mask (att-PSM), the intensity of zero-and first-order diffraction changes as pitch shrinks [33][34][35][36].…”
Section: Phase Shift Maskmentioning
confidence: 99%
“…With advanced design nodes below 45 nm the mask 3D effects have become more pronounced. It is observed that in dense structure regions using oblique illumination and an attenuated phase shifting mask (att-PSM), the intensity of zero-and first-order diffraction changes as pitch shrinks [33][34][35][36].…”
Section: Phase Shift Maskmentioning
confidence: 99%
“…It is observed that in dense structure regions using oblique illumination and an attenuated phase shifting mask (att-PSM), the intensity of zero and first order diffraction changes as pitch shrinks [33][34][35][36].…”
Section: Phase Shift Maskmentioning
confidence: 99%