An improved wideband equivalent circuit model for integrated spiral inductors in CMOS technology

Wu, Yunqiu; Zhao, Chenxi; Liu, Huihua; Yu, Yiming

doi:10.1002/jnm.2640

Cited by 6 publications

(4 citation statements)

References 15 publications

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“…With regard to NCGP, there is an electric coupling path between the input and the output grand pads since they are dependent on each other. Hence, R v , C g , R g are introduced to represent the parasitic parameters of the electric coupling path, 17 so the ground PADs at the Port A connects to the network A. Concerning SCGP and UCGP, the input and output ground have the same reference potential, the ground PADs at the Port A connects to net A.…”

Section: Principle Of the Fixed‐beam Propertymentioning

confidence: 99%

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The investigation of the signal radiation mechanism of differentGSG‐pads connection methods

Song

Liu

Mawuli

et al. 2022

Int J Numerical Modelling

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GSG‐PADs are mostly used structures in Integrated Circuits design. As the operating frequency increases, the coupling effect between the input and output GSG‐PADs is enhanced significantly. This causes signal energy leakage and impacts on the performance of adjacent devices in the system. Beyond microwave frequency, the coupling effect between the input and output of the GSG‐PADs is not only negligible but also varies in magnitude with respect to the connection methods of the GSG‐PADs in the circuit. Therefore, investigating the signal radiation properties of different GSG‐PADs connection methods is essential. Hence, three structures with different input and output ground PAD connection methods have been experimented. Based on the theoretical analysis of the electromagnetic field distribution between the pad network, a corresponding equivalent circuit model has been developed for the three structures. To validate the proposed model, the test structures were fabricated in 0.18 μm CMOS process and measured up to 67 GHz. The root‐mean‐square error (RMSE) of the magnitude of return loss S11 and that of insertion loss S21 are less than 0.013 and 0.003, respectively, when the measurement result is compared with the performance results of the proposed model. Finally, establish the complete model of the DUT and test pads to further verify the accuracy of the proposed two‐port GSG‐PADs model. Hence, the findings of the investigation can provide a theoretical basis for optimizing related layout in integrated circuit design.

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Section: Principle Of the Fixed‐beam Propertymentioning

confidence: 99%

“…The Vector Network Analyzer is used to obtain two‐port S ‐parameters from 1 MHz to 67 GHz. The initial values of each elements of the equivalent circuit model are extracted by the equations from the paper Reference [17] and then the values of the elements are optimized. The extracted values are shown in Table 2 .…”

Section: Model Verificationmentioning

confidence: 99%

The investigation of the signal radiation mechanism of differentGSG‐pads connection methods

Song

Liu

Mawuli

et al. 2022

Int J Numerical Modelling

Self Cite

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“…Although some high-frequency modeling methods of capacitors can be used to establish the models that reflect the multi-resonance characteristics of capacitors, there are still some problems, such as insufficient accuracy, low efficiency, and extreme complexity. 11 There are also some researches on the modeling of inductors and resistors, [12][13][14][15][16][17][18] but similarly, it is difficult to model the actual inductor in Figure 1(B), due to the lack of suitable equivalent circuit model form in these researches. Although some circuit model forms also produce multiple resonances, they are not suitable for modeling of single passive components in Figure 1 because their applicable objects are different or the impedance curve needed to be equivalent is simple.…”

Section: Introductionmentioning

confidence: 99%

An equivalent modeling method of passive components with multi‐resonant frequency

Pan

Ren

Spiazzi

et al. 2023

Circuit Theory & Apps

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High-frequency characteristics of passive components are crucial to the electromagnetic compatibility (EMC) of an electronic system, and modeling of passive components is of significance for EMC analysis. However, challenges remain in the modeling of passive components with multiple resonant frequencies. In this paper, a method for establishing equivalent models of multiresonant frequency passive components, including capacitors, inductors, and resistors, is proposed. Firstly, high-frequency equivalent circuit topologies of the multi-resonant frequency passive components, which are simple, easy to understand, and can be applied to the modeling of passive components with various impedance characteristics, are developed. Secondly, a calculation method of equivalent circuit parameters based on least squares and particle swarm optimization (PSO) is presented, which is not sensitive to the initial value, only needs the estimated range of the equivalent circuit parameters, and very suitable for getting the parameters of equivalent circuit models accurately and efficiently. Finally, to validate the method, some SPICE models of single components are established, and a PCB-level EMC analysis is implemented. The comparisons of the simulated and experimental results show the validity and accuracy of the method. The method is very useful for future components modeling when doing EMC design or other high-frequency designs.

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“…Passive device models in CMOS technology are quite complicated due to the small area. Zhang et al presented an improved wideband single‐π model for on‐chip spiral inductors based on independent test ground PADs. A different group by Zhang et al reported a balun design algorithm based on compensation matching capacitors and their active S parameters.…”

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confidence: 99%

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

2020

Int J Numerical Modelling

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Wireless communication, precision guidance, imaging, internet of things, and biomedical applications in the millimeter-wave and THz bands promise new functionalities that cannot be provided by present systems. Different from present design methods, new design methods are required to support the development of high-performance millimeterwave and THz band devices and systems. These new design methods should incorporate new materials, advanced processing and technologies, and can accurately account for multi-physics coupling effects. This special issue collects 32 papers including 20 papers on active device modeling, nine papers on passive device and circuit modeling and design techniques, and three papers on emerging system applications.Active devices for state-of-the-art millimeter-wave and THz systems discussed in this special issue include Indium phosphide (InP) heterojunction bipolar transistors (HBTs), Indium Gallium Phosphide (InGaP)/Gallium arsenide (GaAs) HBTs, Gallium nitride (GaN) high electron mobility transistors (HEMTs), GaAs HEMTs, complementary metal oxide silicon (CMOS) transistors, and electric vacuum devices. The discussion covers the important device features of high frequency, high power, low noise, and high efficiency. As the frequency goes up to the millimeter-wave and THz bands, advanced physical-based or SPICE-like equivalent circuit and compact models are needed. As a solid-state device, InP transistor can operate at a very high frequency by taking advantages of extremely high electron mobility. Zhang et al 1 presented a review on the compact modeling of InP HBTs for THz integrated circuits. Useful improvements made for HBTs are reported on the analysis of intrinsic base resistances by Chen et al, 2 on large-signal models by Hu et al, 3 on the determination of cutoff and maximum oscillation frequencies by Zhang and Gao, 4 and on the thermal resistance calculation by Wang et al. 5 Due to a high breakthrough voltage and saturation velocity, GaN HEMTs is very promising for millimeter-wave solid-state power amplifiers. Chen et al 6 reported an improved quasi-physics zone division large-signal model to account for electro-thermal effects, which is valid for the ambient temperature range of 245 to 390 K. Physical parameters' effects, reliable parameter extraction, and dynamic thermal impedance extraction for the equivalent circuit models of GaN HEMTs are discussed by Mi et al, 7 Chen et al, 8 and Wang et al, 9 respectively. The modeling of emerging devices is also presented by Chen et al 10 for GaN-on-diamond HEMTs and Zhang et al 11 for AlGaN/GaN fin-shaped HEMTs, which may be interesting for next generation devices. Accurate modeling of transistors' noise performance is important for low-noise applications. Jarndal et al 12 developed a noise model for GaN HEMTs and Caddemi et al 13 reported an improved scalable parameter extraction method for GaAs HEMTs. CMOS transistor is very competitive in millimeter-wave and THz circuits due to its mature process. Bashir et al 14 presented a scalable small-...

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An improved wideband equivalent circuit model for integrated spiral inductors in CMOS technology

Cited by 6 publications

References 15 publications

The investigation of the signal radiation mechanism of differentGSG‐pads connection methods

The investigation of the signal radiation mechanism of differentGSG‐pads connection methods

An equivalent modeling method of passive components with multi‐resonant frequency

Guest Editorial for the special issue on devices and circuits for millimeter‐wave and THz applications

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