An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's

Momose, H.S.; Morimoto, T.; Ozawa, Yoshio; Yamabe, Kikuo

doi:10.1109/16.372075

Cited by 10 publications

(6 citation statements)

References 21 publications

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“…Consequently, a large amount of work has been done for films in the range of 5-10 nm. [11][12][13][14][15][16][17] However, little is known about the current transport in stacked ON and ONO structures, when the oxide equivalent thicknesses of these dielectrics are reduced in the direct tunneling region extending to 1.5-2.0 nm.…”

Section: Introductionmentioning

confidence: 99%

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Yang

Niimi

Lucovsky

1998

Journal of Applied Physics

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Direct and Fowler-Nordheim tunneling currents through oxide and dual layer silicon oxide-silicon nitride dielectrics are investigated for substrate and gate injection. The calculations include depletion effects in the heavily doped (n ϩ) polysilicon gate electrodes as well as quantization effects in the less heavily doped n-type substrates. The Wentzel-Kramers-Brillouin ͑WKB͒ effective mass approximation has been compared with exact calculations for the tunneling probability, and based on these comparisons it has been found that the WKB approximation is adequate for single layer dielectrics, but is not for the dual layer dielectrics that are the focus of this article. Using exact tunneling transmission calculations, current-voltage (I-V) characteristics for ultrathin single layer oxides with different thicknesses ͑1.4, 2.0, and 2.3 nm͒ have been shown to agree well with recently reported experiments. Extensions of this approach demonstrate that direct tunneling currents in oxide/nitride structures with oxide equivalent thickness of 1.5 and 2.0 nm can be significantly lower than through single layer oxides of the same respective thickness.

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Section: Introductionmentioning

confidence: 99%

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Yang

Niimi

Lucovsky

1998

Journal of Applied Physics

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“…[39][40][41][42] These results together can be used to explain the abnormally large electron and hole capturing at the Si 3 N 4 /thermal SiO 2 interface. [3][4][5][6] However, the results obtained in the present work show that the oxidation mechanism of Si 3 N 4 is more complicated than that based only on transformation of Si-N bonds in Si 3 N 4 into Si-O bonds. In fact, some unusual kinetics of Si 3 N 4 oxidation are observed.…”

Section: Creation Of Si-si Bonds At Simentioning

confidence: 87%

“…Electron and hole localization on deep traps in the ONO structure can be used to write or erase the information in EEPROMs. Abnormally large trapping of electrons at the Si 3 N 4 /thermal SiO 2 interface [3][4][5] and hot electron and hole capturing in the ONO structure 6 are often reported experimentally. The nature of this phenomenon is still unclear.…”

mentioning

confidence: 99%

Study of Excess Silicon at Si3 N 4 / Thermal SiO2 Interface Using EELS and Ellipsometric Measurements

Gritsenko

Svitasheva

Petrenko

et al. 1999

J. Electrochem. Soc.

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The chemical composition and structure of the Si3N4/normalthermal SiO2 interface in silicon/oxide/nitride/oxide (SONO) structures were studied by using electron energy loss spectroscopy (EELS) and ellipsometric measurements. Both experiments show the existence of excess silicon at the Si3N4/normalthermal SiO2 interface, in the form of Si‒Si bonds in the Si‐rich silicon oxynitride. Wet oxidation of the as‐deposited Si3N4 has profound effects on the interfaces in SONO structure. Mechanisms responsible for these observations are proposed based on the chemical reactions during the synthesis of the SONO structure. Particularly, we propose that the Si‒Si bonds are produced by replacing nitrogen with oxygen during the oxidation of Si3N4 . These bonds should be the responsible candidates for the positive charge accumulation in re‐oxidized nitrided oxide at the hot hole injection and ionizing radiation. © 1999 The Electrochemical Society. All rights reserved.

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“…Silicon oxynitride film has been attracting a lot of attention because it has unique properties in semiconductor applications. One of these properties is that of minimizing boron penetration in surface‐channel P‐type Metal‐Oxide Semiconductor Field‐Effect Transistor (PMOSFETs) with P + gate to form an efficient diffusion barrier . Another property is that of preventing gate leakage current through the gate oxide due to a direct tunneling mechanism because it has a high dielectric constant that provides a physically thicker film for the same electrically equivalent SiO 2 thickness …”

Section: Introductionmentioning

confidence: 99%

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

Zhu

Teo

Ong

et al. 2012

Surface & Interface Analysis

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Silicon oxynitride has been used as a shallow gate oxide material for microelectronics and its thickness has been reduced over the years to only a few tens of angstroms due to device size scaling. The nitride distribution and density characteristic in the gate oxide thus becomes imperative for the devices. The shallow depth profiling capability using time‐of‐flight secondary ion mass spectrometry (TOF‐SIMS) has huge potential for the nitrogen characterization of the shallow gate oxide film. In this article, both positive and negative spectra of TOF‐SIMS on silicon oxynitride have been extensively studied and it was found that the silicon nitride clusters SixN− (x = 1–4) are able to represent the nitrogen profiles because their ion yields are high enough, especially for the low‐level nitride doping in the oxide, which is formed by the annealing of nitric oxide on SiO2/Si. The gate oxide thickness measured by the TOF‐SIMS profiling method using 18O or CsO profile calibration was found to correlate very well with transmission electron microscope measurement. The nitrogen concentration in the gate oxide measured using the TOF‐SIMS method was consistent with the results obtained using the dynamic SIMS method, which is currently applied to relatively thicker oxynitride films. Copyright © 2012 John Wiley & Sons, Ltd.

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An improvement of hot-carrier reliability in the stacked nitride-oxide gate n- and p-MISFET's

Cited by 10 publications

References 21 publications

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Tunneling currents through ultrathin oxide/nitride dual layer gate dielectrics for advanced microelectronic devices

Study of Excess Silicon at Si3 N 4 / Thermal SiO2 Interface Using EELS and Ellipsometric Measurements

Time‐of‐flight secondary ion mass spectroscopic characterization of the nitrogen profile of shallow gate oxynitride thermally grown on a silicon substrate

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