An improvement of the breakdown voltage characteristic of trench gate IGBTs by using a shielding layer

Design and process simulation on power device IGBT

“…The voltage handling capability of IGBT structure is given by the breakdown voltage (V B ) of the P-body/N−junction, that is strongly dependent on the thickness (W epi ) and the doping of the epitaxial layer (N epi ) [5] . According to equation (1) and (2), the optimal parameters are calculated: the n-base doping concentration is 3.05×10 13 cm -3 , the thickness is about 101.7μm.…”