An Improvement on the Charge Transfer Property of CuInS2/CdS Quantum Dot-Sensitized Solar Cells by a Two-Step Assembly Linking Process

Huang, Dong; Peng, Zhuoyin; Cheng, Xiaoyu; Long, Chengtang; Luo, Wen; Wang, Yue; Fu, Yilong

doi:10.1007/s11664-022-09452-7

Cited by 6 publications

(3 citation statements)

References 24 publications

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“…Herein, ZnO orderly nanoarrays and CuInS 2 QDs are intrinsic n‐type semiconductors, and NiO is intrinsic p‐type semiconductor. [ 30,50,54 ] With the formation of NiO/CuInS 2 QDs/ZnO pn junction, the potential has been reconstituted. Corrected by Ag/AgCl, the Fermi levels of ZnO (CB‐ZnO, vs NHE) shift from −0.110 to 0.085 V, the Fermi levels of CuInS 2 QDs (CB‐CuInS 2 QDs, vs NHE) shift form −0.332 to −0.189 V, and the Fermi levels of NiO (VB‐NiO, vs NHE) shift from 0.462 to 1.404 V. By the intrinsic bandgaps (Figure S1, Supporting Information), the VB of ZnO and CuInS 2 QDs are 3.166 V (vs NHE) and 2.155 V (vs NHE), the CB of NiO is −2.107 V (vs NHE).…”

Section: Resultsmentioning

confidence: 99%

“…[ 44 ] Herein, the transition layer modification has attracted lots of attentions, because which can decrease the potential gradient to regulate potential structure, [ 45,46 ] while accelerating charge carrier transportation via interface modification. Especially the CuInS 2 quantum dots, [ 47,48 ] besides depended on itself size, the bandgap, and potential can also be regulated by the ratio of Cu/In, which can provide more larger range for matching the pn junction potential gradient, such as Li and groups have used CuInS 2 nanocrystals to improve the photoresponse, [ 49 ] Peng and groups have improved the charge transfer property of solar cells via CuInS 2 /CdS QDs, [ 50 ] and so on. Additionally, the presence of Cu vacancy would induce the Ni injection to increase the Ni vacancy, [ 51,52 ] which can increase the Ni 3+ ions to increase p‐type conductivity.…”

Section: Introductionmentioning

confidence: 99%

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The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

Pan

Niu

Xiao

et al. 2022

Adv Materials Inter

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the transparent photovoltaic device with perfect balance between transparency and photovoltaic conversion, is regarded as a desired candidate, [15][16][17] e.g., Lei and groups have reported a smart windows via transparent silver nanofiber. [18] Among these, ZnO is reported as a costefficient transparent semiconductor, [19] because which obtains decent transparency with wide bandgap (3.20-3.37 eV) and better intrinsic n-type conductivity, [20] including the easy modification is also irreplaceable reason for actual photovoltaic devices. For instance, Yang and groups have reported remarkable perovskite solar cells with PbS quantum dots (QDs) decorated ZnO electron transport layer, [21] Patel and groups have reported a hypersensitized transparent photovoltaic skin via ZnO, [22] etc. Especially, the ZnO-based orderly nanoarrays film has attracted lots of attentions for fabrication of transparent photovoltaic device, herein, the orderly arrays interval can increase the solar efficiency while maintaining the transparency via multiple reflections, and the nanorods can provide an excellent charge carrier transportation route to increase the conductivity, [23][24][25] e.g., Liu et al. have reported CuO/ZnO nanoarrays to achieve decent photoelectrochemical performance, [26] Su et al. have used ZnO/CdS/CuSbS 2 -based nanoarrays as excellent photoanode, [27] etc. Additionally, the ZnO-based nanoarrays with high Young's modulus can improve the physical stability of formed photovoltaic devices. [28,29] P-type semiconductor is another important issue, [30,31] including the potential and carrier dynamics factors. Now, a mass of p-type transparent materials are reported, [32,33] such as Cu 2 O, SnO, or CuAlO 2 , etc. Herein, due to the appropriate bandgap and better intrinsic p-type conductivity, the NiO is reported as a splendid option, [34,35] because the Ni 3+ ions caused by Ni vacancy can increase the hole-related carrier to improve p-type conductivity, e.g., Teng and groups have reported a remarkable UV photodetector based on NiO/TiO 2 , [36] Song and groups have reported remarkable NiO layer modified solar cells, [37] etc. Additionally, the presence of Ni 2+ /Ni 3+ caused by nonstoichiometric ratio and interval oxygen can increase the hole-related carrier further. [38] Even so, the reported photovoltaic conversion efficiency is hardly to meet actual requirement, especially the carrier efficiency, has been the main bottleneck for photovoltaicThe transparent pn junction of NiO/CuInS 2 quantum dots (QDs)/ZnO orderly nanoarrays has been fabricated via a hybrid approach of sputteringhydrothermal-chemical method. As revealed, the as-prepared NiO/CuInS 2 QDs/ZnO transparent pn junction exhibits decent transparency (≈85%), remarkable photovoltaic enhancement (≈2.5 × 10 3 folds, PCE of ≈1.19%) than that of intrinsic NiO/ZnO pn junction, and decent stability (4000s' cycle), which is attributed to that the dual functional CuInS 2 QDs with appropriate Fermi level, high QY, and wide bandgap, can optimize photogenerated carrier concentra...

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

Pan

Niu

Xiao

et al. 2022

Adv Materials Inter

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“…The CdSe/CdS co-sensitized configuration has shown to be an excellent light absorber for QDSSCs due to their heterojunction potential, thus facilitating electron transport [17,18]. Specifically, the CdS layer can act as a seed layer for CdSe growth and create an energy barrier to suppress charge recombination [19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Sol-gel CdS layer for TiO₂ nanorod-based quantum dots-sensitized solar cells

Chen,

Meng,

Feng

et al. 2024

Mater. Res. Express

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The CdS layer was essential for CdSe quantum dot-sensitized solar cells (QDSSCs) as the seed layer and energy barrier. Here, a novel sol-gel method was employed to prepare the CdS interlayer (SG-CdS) for TiO2 nanorod-based QDSSCs. Due to the sufficient reaction of the Cd and S sources in the sol-gel solution, SG-CdS exhibited fewer impurities than CdS produced by commonly used chemical bath deposition (CBD-CdS). QDSSCs with SG-CdS exhibited an open-circuit voltage of 490 mV, a short-circuit current density of 14.12 mA/cm2, and a fill factor of 0.35. The power conversion efficiency of the QDSSCs with SG-CdS was 2.48%, which was higher than that of the QDSSCs with CBD-CdS (2.02%). Moreover, electrochemical impedance spectroscopy showed that the QDSSCs with SG-CdS yielded a charge recombination resistance of 99.92 Ω at a bias voltage of −0.5 V, demonstrating less charge recombination than the QDSSCs with CBD-CdS (82.16 Ω). Therefore, the performance of the CdSe QDSSCs could be improved by reducing the impurities in CdS. This study revealed the advantages of SG-CdS in replacing CBD-CdS as the interlayer for charge transport, as well as good applicability with nanorod photoanodes in QDSSCs.

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CdS Nanoparticles Self-Assembled in Porous Anodic Aluminum Oxide Nanochannels and Used for Carcinoembryonic Antigen Detection

Yang

Chen

Qin

et al. 2023

J. Electron. Mater.

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An Improvement on the Charge Transfer Property of CuInS2/CdS Quantum Dot-Sensitized Solar Cells by a Two-Step Assembly Linking Process

Cited by 6 publications

References 24 publications

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

Sol-gel CdS layer for TiO₂ nanorod-based quantum dots-sensitized solar cells

CdS Nanoparticles Self-Assembled in Porous Anodic Aluminum Oxide Nanochannels and Used for Carcinoembryonic Antigen Detection

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An Improvement on the Charge Transfer Property of CuInS2/CdS Quantum Dot-Sensitized Solar Cells by a Two-Step Assembly Linking Process

Cited by 6 publications

References 24 publications

The NiO/CuInS2 Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS2 QDs

The NiO/CuInS2 Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS2 QDs

Sol-gel CdS layer for TiO2 nanorod-based quantum dots-sensitized solar cells

CdS Nanoparticles Self-Assembled in Porous Anodic Aluminum Oxide Nanochannels and Used for Carcinoembryonic Antigen Detection

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The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

The NiO/CuInS₂ Quantum Dots/ZnO Orderly Nanoarrays Transparent Pn Junction Towards Enhanced Photovoltaic Conversion via Dual Functional CuInS₂ QDs

Sol-gel CdS layer for TiO₂ nanorod-based quantum dots-sensitized solar cells