2011
DOI: 10.1088/0960-1317/21/7/074011
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An in-plane SiGe differential capacitive accelerometer for above-IC integration

Abstract: MEMS above-IC monolithic integration can yield a very compact device with good cost-effectiveness. One of the major challenges for this technology is to protect the CMOS from the heat introduced by the MEMS fabrication. In this paper, we present the design and fabrication of a novel lateral capacitive accelerometer, utilizing a low thermal budget SiGe MEMS technology. The accelerometer features a 4 µm SiGe structural layer thickness with a shock protector gap of 500 nm. Benefiting from the low temperature (∼45… Show more

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Cited by 9 publications
(3 citation statements)
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References 11 publications
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“…The XBMs presented here are made with the poly-SiGe MEMS process developed by IMEC [5][4]. In-plane magnetometers were designed to measure the magnetic field in the plane as depicted in Figure 2 and Figure 3(a).…”
Section: B Design and Modelling Of Sige-based Devicesmentioning
confidence: 99%
“…The XBMs presented here are made with the poly-SiGe MEMS process developed by IMEC [5][4]. In-plane magnetometers were designed to measure the magnetic field in the plane as depicted in Figure 2 and Figure 3(a).…”
Section: B Design and Modelling Of Sige-based Devicesmentioning
confidence: 99%
“…Both in-plane (18) and out-of-plane (19) low-g accelerometers are fabricated in the Gemini project. Figure 11 shows the designed in-plane differential capacitive accelerometer.…”
Section: Concept Gemini Accelerometersmentioning
confidence: 99%
“…In addition, they can be developed into integrated circuit (IC) packages. 22 There are a variety of ways to measure rotation, which then allows the amount of tilt to be determined. [23][24][25] An inexpensive but effective approach to measure the relative rotation between two linkages is via the use of optical rotary encoders 26 or potentiometers.…”
Section: Introductionmentioning
confidence: 99%