An inductor-coupling resonated CMOS low noise amplifier for 3.1&amp;#x2013;10.6GHz ultra-wideband system

Huang, Zhe-Yang; Huang, Che-Cheng; Chen, Chun‐Chieh; Hung, Chung-Chih; Chen, Chia-Min

doi:10.1109/iscas.2009.5117725

Cited by 12 publications

(3 citation statements)

References 3 publications

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“…There are several broadband LNA design techniques using resistive feedback (Seong, Jang, & Choi, 2011;Zhan & Taylor, 2006), dual reactive feedback (Fu & Kuo, 2006), input LC bandpass filtering (Bevilacqua & Niknejad, 2004;Ismail & Abidi, 2004) and common-gate topology (Chehrazi, Mirzaei, Bagheri, & Abidi, 2005;Shim, Yang, & Jeong, 2013). A wideband response can also be designed by transformers (Z. Y. Huang, C. C. Huang, C. C. Chen, Hung, & C. M. Chen, 2009;Meaamar, Boon, Yeo, & Do, 2010;Reiha & Long, 2007). However, having a broadband gain response is unfavourable, because it does not attenuate undesired interference, and thus, stringent linearity requirements are placed on the succeeding stages.…”

Section: Introductionmentioning

confidence: 99%

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

Shim¹,

Jeong²

2014

International Journal of Electronics

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This paper presents the design of a 2.5/3.5-GHz dual-band low-power and low-noise CMOS amplifier (LNA), which uses the capacitor cross-coupling technique and current-reuse method with four switches. The proposed LNA uses a single RF block and a broadband input stage, which is a key aspect for the easy reconfiguration of a dual-band LNA. Switching at the inter-stage and output allows for the selection of a different standard. The dual-band LNA attenuates the undesired interference of a broadband gain response circuit, which allows the linearity of the amplifier to be improved. The capacitor cross-coupled gm-boosting method improves the NF and reduces the current consumption. The proposed LNA employs a current-reused structure to decrease the total power consumption. The inter-stage and output switched resonators switch the LNA between the 2.5-GHz and 3.5-GHz bands. The proposed dual-band LNA optimises power consumption by the securing gain, noise figure and linearity. The simulated performance reveals gains of 16.7 dB and 19.6 dB, and noise figures of 3.04 dB and 2.63 dB at the two frequency bands, respectively. The linearity parameters of IIP3 are −5.7 dBm at 2.5 GHz and −9.7 dBm at 3.5 GHz. The proposed dual-band LNA consumes 5.6 mW from a 1.8 V power supply.

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Section: Introductionmentioning

confidence: 99%

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

Shim¹,

Jeong²

2014

International Journal of Electronics

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“…There is a close trade-off between them. There are some proposed solutions and circuits for each parameter [2][3][4][5][6][7][8]. However, some parameters would be ruined by improving the others [4].…”

Section: Introductionmentioning

confidence: 99%

A CMOS 3.1 - 10.6 GHz UWB LNA Employing Modified Derivative Superposition Method

Homaee¹

2013

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Low noise amplifier (LNA) performs as the initial amplification block in the receive path in a radio frequency (RF) receiver. In this work an ultra-wideband 3.1 10.6-GHz LNA is discussed. By using the proposed circuits for RF CMOS LNA and design methodology, the noise from the device is decreased across the ultra wide band (UWB) band. The measured noise figure is 2.66 3 dB over 3.1 10.6-GHz, while the power gain is 14 ± 0.8 dB. It consumes 23.7 mW from a 1.8 V supply. The input and output return losses (S11 & S22) are less than –11 dB over the UWB band. By using the modified derivative superposition method, the third-order intercept point IIP3 is improved noticeably. The complete circuit is based on the 0.18 μm standard RFCMOS technology and simulated with Hspice simulator

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“…There are three ways in which a wideband impedance matching network is typically realized including: using an LC band pass filter at the input [2]- [5], using a common-gate topology [6]- [10], or by using feedback, such as dual reactive feedback [11]- [13], or resistive/source follower feedback [14]- [18]. A wideband response can also be achieved through the use of transformers [19]- [21]. Transformer coupling has also been used in the design of single-, narrow-band LNAs (e.g., [22], [23]).…”

Section: Introductionmentioning

confidence: 99%

A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

Neihart

Brown

2012

IEEE Trans. Circuits Syst. I

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This paper analyzes and presents design equations for a new transformer-based matching network capable of simultaneously matching two different frequencies. This network is then used to realize a dual-band low-noise amplifier that is fabricated in a 0.13 m CMOS process and is capable of operating at 2.45 GHz and 6 GHz. The measured and noise figure for 2.45 GHz (6 GHz) is 9.4 dB (18.9 dB) and 2.8 dB (3.8 dB), respectively. The IIP3 is measured to be and at 2.45 GHz and 6 GHz, respectively. The power consumption of the system (excluding the buffer) is 2.79 mW from a 1.2 V supply and the total area is m m.Index Terms-CMOS, low-noise amplifier (LNA), multistandard, reconfigurable.

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An inductor-coupling resonated CMOS low noise amplifier for 3.1–10.6GHz ultra-wideband system

Cited by 12 publications

References 3 publications

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

Design of a capacitor cross-coupled dual-band LNA with switched current-reuse technique

A CMOS 3.1 - 10.6 GHz UWB LNA Employing Modified Derivative Superposition Method

A Dual-Band 2.45/6 GHz CMOS LNA Utilizing a Dual-Resonant Transformer-Based Matching Network

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