An Inductorless 60GHz Down-Conversion Mixer in 22nm FD-SOI CMOS Technology

Testa, Paolo Valerio; Ries, Vincent; Carta, Corrado; Ellinger, Frank

doi:10.23919/eumic.2019.8909566

Cited by 5 publications

(3 citation statements)

References 9 publications

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“…Figure 2(a) shows the cross-section of the transmission lines. The L B line suffers from higher losses than the O I one because of the reduced conductivity and thickness of the signal conductor [6]. This is confirmed in Fig.…”

Section: Mm-wave Ic Technology and Passive Componentssupporting

confidence: 54%

“…The mixer was implemented in a 22 nm FD-SOI CMOS technology offered by GLOBALFOUNDRIES under the trademark 22-FDX R [2]. The employed metal stack has nine copper levels labeled from the bottom to the top M 1,2 , C 1-5 , J A , O I , plus an additional top aluminum layer L B [2], [6]. A thin buried oxide layer isolates the fully-depleted transistors from the low-resistivity substrate, decreasing the capacitive parasitics [2], [4].…”

Section: Mm-wave Ic Technology and Passive Componentsmentioning

confidence: 99%

“…Furthermore, the latest FD-SOI technologies provide strain-engineered pMOS with performance comparable to those of the nMOS transistors [2], [3]. Recently, millimeter-wave circuits have been realized in FD-SOI CMOS processes, such as power amplifiers [3], low-noise amplifiers [4], broadband amplifiers [5], down-conversion mixers [6], phase shifters [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Complementary Ring Mixer Driven by a Single-Ended LO in 22-nm FD-SOI CMOS for K and Ka-Bands

Testa

Szilágyi

Carta

et al. 2021

IEEE Open J. Circuits Syst.

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This paper presents a double-balanced up-conversion ring mixer based on complementary switches operating at millimeter-wave frequencies. Complementary-switching relieves the mixer from the need for a differential Local-Oscillator (LO) signal, simplifying the design and improving the circuit performance. A prototype, capable of operation between 18 GHz and 32 GHz, is implemented in a 22 nm FD-SOI CMOS technology offering n-and p-type transistors with comparable performance. Furthermore, the presented circuit also exploits the back-gate control voltage offered by the process to minimize the transistors threshold voltage, reducing the minimum LO power required to saturate the mixer gain. Measurements showed a conversion gain of -5.5 dB, an output power at 1 dB gain compression (o1dBCp) of -7 dBm, and a Radio-Frequency (RF) bandwidth of 10 GHz. These results were demonstrated for an LO power of 3 dBm at 23.5 GHz or 28 GHz, a DC power of 2.2 mW, and all the mixer ports matched to 50 Ω. The active area of the chip is 0.11 mm 2 , the smallest so far demonstrated for ring mixers. These performances translate in the best-reported figure of merit, which relates gain, RF up-converted power, and required DC and LO power.

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Section: Mm-wave Ic Technology and Passive Componentssupporting

confidence: 54%