An industrial 0.35 μm SiGe BiCMOS technology for 5 GHz WLAN featuring an improved selective epitaxial growth process

Use of Oxynitride Dielectric to Maximise the Growth Rate of Selective Epitaxial Base Layer in a Self-Aligned Double-Polysilicon SiGe Bipolar Transistors

“…The factors mentioned above have a severe negative impact on manufacturability and processing cost. The innovation brought in our technology is the use of a PECVD oxynitride layer instead of the nitride layer to allow a much higher deposition rate of the epitaxial layer 1 . This paper is describing the development, properties and implementation of the oxynitride into the HBT interpoly dielectric layer module of a SiGe BiCMOS technology.…”