An innovative EMI reduction design technique in power converters

Consoli, A.; Musumeci, S.; Oriti, Giovanna; Testa, A.

doi:10.1109/15.544311

Cited by 61 publications

(16 citation statements)

References 1 publication

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“…Although each solution has their merits, the primary disadvantage of solutions proposed in [4]- [12] is their complexity, and hence, their difficulty of implementation using discrete components. These factors may require the creation of an application-specific integrated circuit (ASIC).…”

Section: Introductionmentioning

confidence: 99%

“…Authors such as Consoli et al [4] have employed control of gate charge on MOSFET turn-ON and turn-OFF through the use of additional current sources and sinks engaged using monostable timers initiated at the beginning of the turn-ON and turn-OFF cycles, respectively. Yee [5], and Magruder and Fisch [6] have employed a technique where gate charge control has been employed through an observation of the actual drain-to-source voltage in the case of a MOSFET, and the collector to emitter voltage in the case of an IGBT.…”

Section: Introductionmentioning

confidence: 99%

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Gate Charge Control for MOSFET Turn-Off in PWM Motor Drives Through Empirical Means

Makaran

2010

IEEE Trans. Power Electron.

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The following paper presents a novel, empirical approach to gate charge control of a MOSFET used in low-side drive applications such as found in dc motor drives during turn-OFF, using pulsewidth modulation (PWM) based on ideal expressions of MOSFET behavior during turn-OFF. Without gate charge control, ringing and overshoot caused by dv/dt effects during the turn-OFF can result in an increase in electromagnetic interference as well as an increased power dissipation. The ringing can be difficult to suppress through the addition of suppression components as they add cost and bulk to the motor controller. Previous work has focused on the observation of dv/dt, feed-forward, or openloop means. Although complex gate charge solutions exist in dedicated application-specific integrated circuits (ASICs), a simple, cost-effective solution is proposed in this paper. This solution differs from previous solutions, making use of the ideal relationship between the drain-to-source and gate-to-source voltage of the MOS-FET on turn-OFF to determine the region of high dv/dt to control a two-staged gate charge removal scheme. This solution can be readily implemented in microprocessor-based control schemes used to control motor drives and switch-mode power supplies utilizing lowside MOSFET switching. Circuit operation and advantages are presented and supported by simulation and experimental results.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Gate Charge Control for MOSFET Turn-Off in PWM Motor Drives Through Empirical Means

Makaran

2010

IEEE Trans. Power Electron.

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“…IGBT converters are now used in various applications such as power transmission systems (high voltage DC transmission and wireless power transfer), transportation (railways, maglev trains, and aerospace) and industrial applications (variable speed drives). Unfortunately, the fast switching transients of IGBTs are intrinsic sources of high-level electromagnetic interference (EMI) [1][2][3]. Up to now, electromagnetic compatibility (EMC) problems are normally tackled by acting upon the coupling or transmission mode, usually by inserting an EMI filter at the input of the electronic circuit to reduce the conducted emissions [4][5][6][7][8] and by shielding to reduce the radiated emissions [1,2].…”

Section: Introductionmentioning

confidence: 99%

Investigation of the trade‐off between switching losses and EMI generation in Gaussian S‐shaping for high‐power IGBT switching transients by active voltage control

Yang

Wen

et al. 2016

IET Power Electronics

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Over three decades of development effort has brought insulated gate bipolar transistor (IGBT) technology to a high-level of maturity. IGBT converters have been widely used in industry. However, the high-speed switching transient of the IGBT-freewheel diode chopper cell causes high-level electromagnetic interference (EMI). Electromagnetic compatibility requirements are normally taken into account by utilising costly EMI filters or shielding on the load and supply side. The risk of this traditional method is to incur a delay in commercialising the converters since identification of the failure causes, modifications, and successfully re-testing are required. A promising alternative is to constrain the EMI at source by introducing active voltage control technique and shaping the IGBT switching transient into a sophisticated 'S'-shape. Previously, IGBT switching waveforms have been successfully shaped into an advanced Gaussian 'S'-shape with the EMI greatly reduced. In this study, the authors further investigated the trade-off between EMI generation and switching losses in such an S-shaping method. The investigation was carried out in an accurate physical IGBT/diode model that is able to accurately simulate the device switching transient. From the results, it can be seen that by using the Gaussian S-shaping method the trade-off between EMI and switching losses could be much improved.

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“…However, since MOSFETs usually induce high di/dt and dv/dt during the switching commutation transient, the systems may suffer from electromagnetic interference (EMI) issues [1,2]. Therefore, it is critical to control the di/dt and dv/dt of the MOSFET.…”

Section: Introductionmentioning

confidence: 99%

A novel progressive trigger method of di/dt control for MOSFET

Zhang

Pan

et al. 2016

IEICE Electron. Express

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A novel progressive trigger (PT) method of di/dt control for MOSFET is presented in this paper. The principle of the proposed method is based on the progressive trigger current during ON and OFF states by variable channel width for MOSFET. The experimental results show that the di/dt reduces from 105 mA/nS to 57 mA/nS for OFF state, and from 110 mA/nS to 86.7 mA/nS for ON state with R ON = 0.5 Ω and V gg = 3 V. The flexibility of the method is easy to implement in integrated circuits.

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An innovative EMI reduction design technique in power converters

Cited by 61 publications

References 1 publication

Gate Charge Control for MOSFET Turn-Off in PWM Motor Drives Through Empirical Means

Gate Charge Control for MOSFET Turn-Off in PWM Motor Drives Through Empirical Means

Investigation of the trade‐off between switching losses and EMI generation in Gaussian S‐shaping for high‐power IGBT switching transients by active voltage control

A novel progressive trigger method of di/dt control for MOSFET

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