An innovative silicon photomultiplier digitizing camera for gamma-ray astronomy

Heller, M.; Schioppa, E. J.; Porcelli, A.; Pujadas, I. Troyano; Ziętara, K.; Volpe, D. della; Montaruli, T.; Cadoux, F.; Favre, Y.; Aguilar, J. A.; Christov, A.; Prandini, E.; Rajda, P.; Rameez, M.; Bilnik, W.; Błocki, J.; Bogacz, L.; Borkowski, J.; Bulik, T.; Frankowski, A.; Grudzińska, M.; Idźkowski, B.; Jamrozy, M.; Janiak, M.; Kasperek, J.; Lalik, Krzysztof; Lyard, E.; Mach, E.; Mandat, D.; Marszałek, Adam; Miranda, Luis David Medina; Michałowski, J.; Moderski, R.; Neronov, A.; Niemiec, J.; Ostrowski, M.; Paśko, P.; Pech, M.; Schovánek, Petr; Seweryn, K.; Sliusar, Vitalii; Skowron, K.; Stawarz, Ł.; Stodulska, M.; Stodulski, M.; Walter, R.; Wiȩcek, M.; Zagdański, A.

doi:10.1140/epjc/s10052-017-4609-z

Cited by 42 publications

(62 citation statements)

References 18 publications

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“…3, showing Ratio = I data − I f it /I data and dI dV bias . It is calculated as: 3 The µcell works in Geiger-Avalanche mode meaning that when a photon is absorbed, an electron-hole pair is created and the high electric field in the junction starts charge multiplication, which produces an avalanche. If the field is not reduced, the charge avalanche is stationary and leads to thermal destruction of the device.…”

Section: Forward IV Characterizationmentioning

confidence: 99%

“…Hence, larger devices tend to have longer output signals and be more noisy. However, as shown by the SST-1M camera [3], with the proper electronics, such a large device can achieve the desired performances in specific applications. This work reports on the characterization studies done to validate the design and verify the performances of the SST-1M new sensor type.…”

Section: Introductionmentioning

confidence: 99%

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Characterization of a large area silicon photomultiplier

Nagai

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Barbano

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (SiPMs), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical cross-talk, afterpulse probability. For the measurement of the breakdown voltage, V BD , several methods using the current-voltage IV curve are compared, such as the "IV Model", the "relative logarithmic derivative", the "inverse logarithmic derivative", the "second logarithmic derivative", and the "third derivative" models. We also show how some of these characteristics can be quite well described by few parameters and allow, for example, to build a function of the wavelength and over-voltage describing the photodetection efficiency. This is fundamental to determine the working point of SiPMs in applications where external factors can affect it.These methods are applied to the large area monolithic hexagonal SiPM S10943-2832(X), developed in collaboration with Hamamatsu and adopted for a camera for a gamma-ray telescope, called the SST-1M. We describe the measurements of the performance at room temperature of this device. The methods used here can be applied to any other device and the physics background discussed here are quite general and valid for a large phase-space of the parameters.

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Section: Forward IV Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Characterization of a large area silicon photomultiplier

Nagai

Alispach

Barbano

et al. 2019

Nuclear Instruments and Methods in Physics Research Section A:

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“…Indeed, it can also be extended to the AC coupling case. As a matter of fact, in [5] it can be seen that the standard deviation of the Figure 13: Correction bias voltage V corr (left) that needs to be applied to have a constant overvoltage of ∆V =2.8 V as a function of the baseline shift for two values of R bias of 10 kΩ (rectangles) and 2.4 kΩ (triangles). A linear behaviour of V corr with the baseline shift is found with slope of 13.47 (R bias = 10 kΩ) and 3.23 mV/ADC (R bias = 2.4 kΩ).…”

Section: Discussionmentioning

confidence: 99%

“…Further measurements are performed with the SST-1M camera [5] and its camera test setup (CTS), at the University of Geneva. The CTS calibration tool, described in Ref.…”

Section: Validation With the Camera Test Setupmentioning

confidence: 99%

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SiPM behaviour under continuous light

et al. 2019

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A: This paper reports on the behaviour of Silicon Photomultiplier (SiPM) detectors under continuous light. Usually, the bias circuit of a SiPM has a resistor connected in series to it, which protects the sensor from drawing too high current. This resistor introduces a voltage drop when a SiPM draws a steady current, when illuminated by constant light. This reduces the actual SiPM bias and then its sensitivity to light. As a matter of fact, this effect changes all relevant SiPM features, both electrical (i.e. breakdown voltage, gain, pulse amplitude, dark count rate and optical crosstalk) and optical (i.e. photon detection efficiency). To correctly operate such devices, it is then fundamental to calibrate them under various illumination levels.In this work, we focus on the large area (∼1 cm 2 ) hexagonal SiPM S10943-2832(X) produced by Hamamatsu HPK for the camera of a gamma-ray telescope with 4 m-diameter mirror, called the SST-1M. We characterize this device under light rates raging from 3 MHz up to 5 GHz of photons per sensor at room temperature (T = 25 • C). From these studies, a model is developed in order to derive the parameters needed to correct for the voltage drop effect. This model can be applied for instance in the analysis of the data acquired by the camera to correct for the effect. The experimental results are also compared with a toy Monte Carlo simulation and finally, a solution is proposed to compensate for the voltage drop. K: SiPM, voltage drop, SST-1M, PDE, crosstalk, dark count rate, afterpulses, triggering probability, night sky background (NSB) and continuous light.

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