An inorganic resist for ion beam microfabrication

Abstract

We report the properties of an inorganic material as a positive ion-beam resist. The ion beam (H+) exposure characteristics of g–GexSe1−x chalcogenide amorphous glass films were investigated. These films exhibit higher sensitivity as ion-beam resists than they do as positive photo- and electron-beam resists. Pattern replication and delineation with this resist material is demonstrated with a conformal gold mask.

Laser-induced changes in some of the optical properties of Ge20Bi10Se70thin films

“…Considering both the static structural disorder caused by defects and dynamic phonon disorder, both have the same effect on the electronic energy levels under adiabatic approximation [20]. (2) In the case of the higher laser dose (3.4 J/cm 2 ), the instability and the random transition of electrons seem to be reduced as the optical band gap increased to a higher value. But one can observe that a small change occurs in the band tail width E e .…”

“…Amorphous Se 100−x Ge x thin films attract attention because of ease of preparation, ultrafine pattern ability and wide-glass forming range, which can make various structures easily fabricated by different preparation techniques [1][2][3]. Such chalcogenide glasses have many long-range bonds (homo-polar: Se-Se and Ge-Ge) as well as short-range bonds defined as local coordinate polyhedral [4], which are responsible of the band tailing introduced into the gap.…”

Registration of soft x radiation in As2S3 layers

“…The calculations made with the fbrmula of Gruen 18 for the electron penetration depth R in f..Lm as a function of two parameters-the specific gravity of the material (p in g/cm 3 ) and the kinetic energy of the photoelectron ( Vin ke V), indicate a very narrow zone in the arsenic sulfide layer within which the secondary electrons can diffuse (Fig. The calculations made with the fbrmula of Gruen 18 for the electron penetration depth R in f..Lm as a function of two parameters-the specific gravity of the material (p in g/cm 3 ) and the kinetic energy of the photoelectron ( Vin ke V), indicate a very narrow zone in the arsenic sulfide layer within which the secondary electrons can diffuse (Fig.…”

“…[1][2][3][4][5][6][7] The reason for this is not only in the endeavor of the fundamental properties of this interesting group of semiconductors to be better understood, but also in the modern technological trend to create principally new resist recording materials for microlithography.8-1O In this respect there has been very great progress in the application of AS 2 S] and GeSe x layers. [1][2][3][4][5][6][7] The reason for this is not only in the endeavor of the fundamental properties of this interesting group of semiconductors to be better understood, but also in the modern technological trend to create principally new resist recording materials for microlithography.8-1O In this respect there has been very great progress in the application of AS 2 S] and GeSe x layers.…”

Photoinduced transformations in amorphous Se75Ge25 thin film by XeCl excimer-laser exposure

“…Various properties of amorphous germanium selenide thin films have been investigated as inorganic resists to be employed in microlithography techniques using a variety of exposure sources, such as visible light, ultraviolet ͑UV͒ and deep UV light, as well as electron beams and focused ion beams ͑FIBs͒. [6][7][8] We have recently reported on the capability of pattern formation by using amorphous Se 75 Ge 25 as an inorganic resist. Patterns with about 0.8, 0.225, and 0.12 m linewidth are fabricated using optical ͑g-line͒ lithography, low-energy Ga ϩ FIB lithography accompanied by wet chemical etching development, and 40 keV FIB lithography with CF 4 reactive ion etching ͑RIE͒ development, respectively.…”