2020
DOI: 10.1007/s00339-020-03670-8
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An insight into the low doping efficiency of Al in sol–gel-derived ZnO:Al films: role of the dopant chemical state

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Cited by 13 publications
(4 citation statements)
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“…It was observed that Al and Sn are promising candidates for tailoring the ZnO properties [13,14]. Adding aluminum as a dopant reduces the crystallinity of ZnO but improves its electrical and optical properties [15,16]. Also, it has been reported by Duan, et al [14] that the incorporation of Sn in the ZnO lattice leads to a change in the morphology of ZnO nanocrystals from spherical to dumbbell-like shape with great enhancement in the near-and middle-infrared absorption which has been argued to the generation of localized surface plasmon resonance.…”
Section: Introductionmentioning
confidence: 99%
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“…It was observed that Al and Sn are promising candidates for tailoring the ZnO properties [13,14]. Adding aluminum as a dopant reduces the crystallinity of ZnO but improves its electrical and optical properties [15,16]. Also, it has been reported by Duan, et al [14] that the incorporation of Sn in the ZnO lattice leads to a change in the morphology of ZnO nanocrystals from spherical to dumbbell-like shape with great enhancement in the near-and middle-infrared absorption which has been argued to the generation of localized surface plasmon resonance.…”
Section: Introductionmentioning
confidence: 99%
“…Many synthesis methods are employed to synthesize ZnO nanostructures including chemical vapor deposition (CVD), catalysis-driven molecular beam epitaxy, thermal evaporation, sonochemical method, and electrochemical deposition [12][13][14][15][16]. Among all, CVD is the most employed method where Zn or ZnO is evaporated in the hot zone (at temperature 900 -1400 K) of a horizontal tube furnace reactor and then the gaseous phase precursors are pushed by a carrier gas to condense in a lower temperature zone forming the ZnO nanostructures.…”
Section: Introductionmentioning
confidence: 99%
“…Nonetheless, the controlled addition of dopants is often challenging, especially at nanostructures. In this regard, the sol–gel route is limited in the capability of insertion of high-doping amount, as segregation is likely to occur [ 39 ]. Moreover, sol–gel films are often prone to cracking upon drying and, in the case of multicomponent films based on alkoxide precursors, different reactivity could lead to unwanted precipitation of monophasic phases rather than an homogeneous mix [ 40 , 41 , 42 ].…”
Section: Introductionmentioning
confidence: 99%
“…By extrinsic doping with Al, introduced interstitially or substitutionally for Zn, the space around the defect is changed, and the layers of Al-doped ZnO (AZO) are characterized by a good transparency and electrical conductivity [22][23][24]. Different methods have been tested for the deposition of ZnO doped with Al (or In), such as sol-gel [25,26] and co-sputtering of ceramic targets [27], emphasizing the effect of dopant chemical state [25] and dopant excess [27] on the doping efficiency. Other deposition methods include pulsed laser deposition [28], spin coating [29], reactive pulsed laser deposition [30], the effect of deposition conditions on the morphological, structural, optical, and electrical properties of the film being investigated.…”
Section: Introductionmentioning
confidence: 99%