2006 International Conference of the IEEE Engineering in Medicine and Biology Society 2006
DOI: 10.1109/iembs.2006.259577
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An Integrated CMOS Bio-potential Amplifier with a Feed-Forward DC Cancellation Topology

Abstract: This paper describes a novel technique to realize an integrated CMOS bio-potential amplifier with a feedforward DC cancellation topology. The amplifier is designed to provide substantial DC cancellation even while amplifying very low frequency signals. More than 80 dB offset rejection ratio is achieved without any external capacitors. The cancellation scheme is robust against process and temperature variations. The amplifier is fabricated through MOSIS AMI 1.5 microm technology (0.05 mm2 area). Measurement res… Show more

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Cited by 34 publications
(10 citation statements)
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“…<1Hz to 300 Hz) and the spikes signals ranging from 350 Hz to 10 kHz [5][6][7][8][9][10][11][12]. The amplifier is simulated using LTSpice in 90 nm CMOS technology.…”
Section: A Amplifier Gainmentioning
confidence: 99%
“…<1Hz to 300 Hz) and the spikes signals ranging from 350 Hz to 10 kHz [5][6][7][8][9][10][11][12]. The amplifier is simulated using LTSpice in 90 nm CMOS technology.…”
Section: A Amplifier Gainmentioning
confidence: 99%
“…1 shows the schematic of the proposed bio-amplifier which consists of a low-noise DDA, bandwidth (BW) and gain tuning blocks. The DC offset suppression is implemented in the BW block by adopting diode-connected MOS pseudo-resistors (M1 and M2) at the input of DDA along with the input PMOS gate capacitor (Cg) to create an RC high pass filter first introduced in [7]. Its time constant sets the low 3-dB cutoff frequency of the bio-amplifier.…”
Section: IImentioning
confidence: 99%
“…However, the MOS-bipolar resistance between input and output is highly dependent on the large output signal level, which results in distortion [2]. The forward DC cancellation scheme based on MOS pseudo-resistor can be utilized to create an RC high pass filter [7]. The amplifier can achieve DC offset rejection as well as small size without large passive devices.…”
Section: Introductionmentioning
confidence: 99%
“…A major challenge in realizing a single-chip amplifier that meets the above criteria is realizing the large passive elements necessary to achieve a high-pass filter in the near-dc range (to avoid filtering the slow-moving LFP) on silicon [13]. One approach is to use a metal-oxide-semiconductor (MOS) transistor biased in subthreshold (referred to as a subthreshold MOS resistor from here on), to achieve a very large resistance, although other groups have explored alternative techniques [14]. However, this approach limits the achievable gain in a single stage due to the small voltage drop the subthreshold MOS resistor can sustain before its resistance drops.…”
Section: A Hardwarementioning
confidence: 99%