An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes

Oh, Seunghee; Seok, Jongwon

doi:10.1016/j.wear.2008.12.014

Cited by 53 publications

(25 citation statements)

References 44 publications

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“…1,2 The ILD CMP process has been widely studied. [3][4][5][6] Although the actual material removal in ILD CMP is a chemical process, 7 ILD CMP is widely considered as a mechanical process since the apparent material removal rate is proportional to mechanical input like polishing down force and rotational speeds.…”

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confidence: 99%

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ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles

Gaudet

Nair

2013

ECS J. Solid State Sci. Technol.

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The influence of pad intrinsic properties on the removal rate profiles of ILD CMP with fumed silica abrasive slurry was studied by changing pad's polymer hardness, porosity, and pore size. Of these intrinsic properties, pore size is found to be most critical to removal rate profiles. By systematically changing the pore size from <1 μm to >100 μm, with porosity from 5% to 50%, of pad made of thermal-plastic urethane (TPU), removal rate profile of oxide polishing was studied. A flat removal rate profile cross wafer is desired for ILD CMP. It was found that when the pore size was larger than a certain threshold, flat removal rate profiles could be achieved. Below the threshold, severe edge-fast/center-slow removal rate profiles were observed and such profiles cannot be remedied by changing pad's other properties like porosity or polishing process conditions. A model is proposed to explain the non-flat removal rate profiles associated with the small pore size (<20 μm).

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confidence: 99%

“…22 Pad modulus is studied and modeled by many researchers. 6,[23][24][25][26] Bajaj et al found the oxide removal rate in ILD polishing is proportional to pad porosity. 27 Pad surface roughness was studied by McGrath et al 28 and Park et al 29 Lu et al studied the changes of pad pores on the surfaces.…”

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confidence: 99%

ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles

Gaudet

Nair

2013

ECS J. Solid State Sci. Technol.

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“…Then, to validate the chemical actions in the model, the reagent concentration of the polishing slurry varies from 0 to 1 mol/L (NaOH) or 0.8 mol/L (HF), in the same way, other parameters keep as constant. The variation range of polishing pressure or reagent concentration was optimized by Taguchi and design of experiments [4,26] or material removal model [27]. The detail input parameters used for model simulation and model verification are listed in Table 4.…”

Section: Experimental Conditionsmentioning

confidence: 99%

Material removal model of chemical mechanical polishing for fused silica using soft nanoparticles

Liu

Chen

2016

Int J Adv Manuf Technol

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Fiber arrays are used to connect arrayed waveguide chips. The end-faces of fiber array components are multimaterials non-uniform surfaces. Their low polishing quality has become a bottleneck that restricts coupling performance of integrated photo-electronic devices. The chemical mechanical polishing (CMP) is normally used to improve the polishing quality of the end-faces of fiber array components. It is very important to optimize process parameters by researching the mechanical behavior of nanoparticles and material microstructure evolution on the CMP interfaces. Based on the elastic and hyper-elastic contact of the soft polishing nanoparticles with fused silica and polishing pad, respectively, the material removal mechanism at molecular scale of polishing process for fused silica using nanoparticles is investigated, and the material removal rate model is also derived by using Arrhenius theory and molecule vibration theory. Theoretical and experimental results show that the material is mainly removed by the interfacial tribo-chemical effect between polishing nanoparticles and fused silica during CMP process. The penetration depth of a single nanoparticle inside the fused silica is at molecular scale, and the superficial molecules of fused silica are removed by chemical reactions because of enough energy obtained. The material removal rate of fused silica during CMP process is determined by the polishing pressure, the chemical reagents and its concentration, and the relative movement speed between the fused silica workpiece and the polishing pad.

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“…Hence an approximation of the actual feedrate respecting the kinematics is given by Eq. (7). Further details can be found in [17].…”

Section: Milling Time Estimationmentioning

confidence: 99%

“…To model the MRR, two different approaches can be distinguished: analytical models and experimental models [6]. The analytical models are based on the modeling of the interaction between the tool and the workpiece at the level of the abrasive particle [7]. Within the context of mechanical parts such as blowing mold, the models used are rather the experimental ones derived from the analysis of many polishing trials.…”

Section: Introductionmentioning

confidence: 99%

Mold Manufacturing Optimization: A Global Approach of Milling and Polishing Processes

et al. 2015

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Within the context of molds and dies production, frequent changes in design and increased competitiveness require an overall optimized manufacturing process. The finishing process is typically composed of an accurate milling stage to manage shape deviations, followed by polishing operations to reach required surface roughness. Local improvements of milling and polishing set independently do not necessarily lead to an optimal manufacturing process planning. This study aims to propose a method to improve the whole sequence of milling and polishing considering constraints from polishing process and machine tool. The turning point between milling and polishing operations consists in linking them by the evaluation of the surface topography obtained after milling. From there, thanks to a predictive model of surface roughness, the design of polishing operations can be performed, and polishing time evaluated. On the other hand, for a given machine tool and a desired intermediate surface topography, milling parameters for finishing can also be modified and actual machining time predicted. Thus the whole process is evaluated balancing the milling and polishing times to reduce the total manufacturing time. Experiments are carried out on an aluminum mold for blowing process of plastic bottles.

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An integrated material removal model for silicon dioxide layers in chemical mechanical polishing processes

Cited by 53 publications

References 44 publications

ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles

ILD CMP with Silica Abrasive Particles: Effect of Pore Size of CMP Pad on Removal Rate Profiles

Material removal model of chemical mechanical polishing for fused silica using soft nanoparticles

Mold Manufacturing Optimization: A Global Approach of Milling and Polishing Processes

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