2017
DOI: 10.1016/j.jallcom.2016.10.146
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An interesting Eu,F-codoped BiVO4 microsphere with enhanced photocatalytic performance

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Cited by 67 publications
(32 citation statements)
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“…3 (e) shows the V 2p XPS spectra of pure BiVO4, B-BiVO4, and 0.5Co-B-BiVO4. The V 2p3/2 signals have peaks at Eb = 516.3 eV for BiVO4, Eb = 516.5 eV for B-BiVO4, and Eb = 516.7 eV for 0.5Co-B-BiVO4, which correspond the V 5+ [7].The peaks at binding energies of 529.6 eV for pure BiVO4, 529.6 eV for the B-BiVO4, and 529.8 eV 0.5Co-B-BiVO4 correspond to the O1s, as shown in Fig. 3(f).…”
Section: Xps Analysismentioning
confidence: 99%
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“…3 (e) shows the V 2p XPS spectra of pure BiVO4, B-BiVO4, and 0.5Co-B-BiVO4. The V 2p3/2 signals have peaks at Eb = 516.3 eV for BiVO4, Eb = 516.5 eV for B-BiVO4, and Eb = 516.7 eV for 0.5Co-B-BiVO4, which correspond the V 5+ [7].The peaks at binding energies of 529.6 eV for pure BiVO4, 529.6 eV for the B-BiVO4, and 529.8 eV 0.5Co-B-BiVO4 correspond to the O1s, as shown in Fig. 3(f).…”
Section: Xps Analysismentioning
confidence: 99%
“…It has been found that the photocatalytic activity of BiVO4 is determined by its crystal phase. BiVO4 with a monoclinic scheelite structure can show photocatalytic properties and is commonly used as a photocatalyst in water splitting and oxidative decomposition of organic contaminants under visible light irradiation [6][7][8]. The photocatalytic activity of pure BiVO4 still needs improvement due to its high rate of photogenerated electron-hole pair recombination.…”
Section: Introductionmentioning
confidence: 99%
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“…Due to its visible photocatalytic activity, wide bandgap of 2.42 eV, high stability, and non-toxicity, bismuth vanadate (BiVO 4 ) is a promising n-type semiconductor photocatalyst [19][20][21]. However, its resulting carrier transfer efficiency is relatively poor, leading to the recombination of photogenerated electrons and holes, which severely limits the photocatalytic performance of BiVO 4 .…”
Section: Introductionmentioning
confidence: 99%
“…However, its resulting carrier transfer efficiency is relatively poor, leading to the recombination of photogenerated electrons and holes, which severely limits the photocatalytic performance of BiVO 4 . Various studies have assessed BiVO 4 modifications [20,[22][23][24], and substitution or metal doping on BiVO 4 has been shown as the most efficient method to change its carrier transport efficiency. Metal element doping introduces new defects or charges in the crystal lattice [25], influencing the motion of electrons and the creation of holes under light irradiation [26,27].…”
Section: Introductionmentioning
confidence: 99%