An interference robust receive chain for UWB radio in SiGe BiCMOS

Bergervoet, J.; Harish, K.S.; Weide, G. van der; Leenaerts, D.M.W.; Beek, C.Z. van de; Waite, H.; Zhang, Y.; Aggarwal, Sudhir; Razzell, C.; Roovers, R.

doi:10.1109/isscc.2005.1493938

Cited by 30 publications

(11 citation statements)

References 2 publications

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“…As realistic application of the SST, BER is evaluated from measured IIP3 and NF parameters issue from OFDM UWB RF front-end previously realized in a BiCMOS 0,18ptm [5] and 0,25ptm [6] processes. The following table summarizes the front-end performances used.…”

Section: Resultsmentioning

confidence: 99%

Effect of RF Front-End Parameters on UWB-OFDM Receiver Performances in Presence of Adjacent Channel Interferers

Lombard

Ponthus²,

Novakov³

et al. 2006

2006 13th IEEE International Conference on Electronics, Circuits and Systems

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In this paper we present a System Simulation Tool (SST) to analyze the performances of Orthogonal Frequency Division Multiplexing (OFDM) Ultra-Wideband (UWB) receiver. The non-linear receiver RF Front-end operates in presence of adjacent channel interferers. The RF Front-end Signal to Noise Ratio (SNR) and the Third Order Intermodulation Products (IIP3) are considered and their effect on the Bit Error Rate (BER) of the overall receiver were investigated. A simple non-linear model including Gain and IIP3 is calibrated with a real AM/AM response of a Low Noise Amplifier (LNA). The LNA was designed in a 0.13gm CMOS process and uses the low UWB frequency band (3.1 -4.8GHz). Using the SST, the effect of Front-end various performances on the receiver's overall BER were studied. As an application, BER is also evaluated from measured IIP3 and NF parameters of a real UWB RF front-end previously designed and tested.

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Section: Resultsmentioning

confidence: 99%

Effect of RF Front-End Parameters on UWB-OFDM Receiver Performances in Presence of Adjacent Channel Interferers

Lombard

Ponthus²,

Novakov³

et al. 2006

2006 13th IEEE International Conference on Electronics, Circuits and Systems

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“…This cross connection creates the negative transconductance (-g mc ) which compensate positive g mp of the diode connected PMOS and g ds of M 3,4 . Thus the total transconductance at the load is reduced leading to the improvement of the gain as specified in due to the increase of R L (5).…”

Section: Biquadmentioning

confidence: 99%

“…Recently published LPF for UWB show high frequency characteristics, however, the attenuation ratio is moderate with large power consumption [3]- [4]. For wideband LPF, Gm-C LPF is often used but it is limited in linearity, dynamic range and sensitive to parasitic [5].…”

Section: Introductionmentioning

confidence: 99%

380 MHz low-power sharp-rejection active-RC LPF for IEEE 802.15.4a UWB WPAN

Phan

Farrell

Lee³

et al. 2009

2009 IEEE International Symposium on Circuits and Systems

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Abstract-This paper describes a wide-band sharp-rejection active-RC low pass filter (LPF) for pulse-based UWB IEEE 802.15.4a WPA applications. Sharp rejection is attributed to the combination of different AC characteristic of three biquads in series. A simple operational amplifier (Op-amp) is adopted to ensure high frequency performance for the designed filter. The LPF is designed in 0.13µm TSMC CMOS process. The cutoff frequency is 380MHz with about 50% of the tuning range from 300-500MHz. The rejection is 40 dB at 600 MHz. The passband ripple is less than 1.5dB and the filter consumes 4.6mA from 1.2V supply. Core chip size is 580 x 700µm 2 .

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“…Recently, there has been an increasing interest in the "Mode 1" band (3.1-4.8 GHz) of the UWB MB-OFDM standard in particular [2][3][4]. A major proposal in this standard promises that data rates of up to 400-480 Mb/s can be obtained using this low-frequency band alone.…”

Section: Introductionmentioning

confidence: 99%