2011
DOI: 10.1007/s11664-010-1488-6
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An Investigation of Diffusion Barrier Characteristics of an Electroless Co(W,P) Layer to Lead-Free SnBi Solder

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Cited by 14 publications
(4 citation statements)
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References 19 publications
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“…Compared with Cu, Ag and Ni, Co has relatively high rigidity and stability with temperature [11]. Furthermore, Co is more active than Cu and can form three Co-Sn IMC below 400ºC [12]. For these reasons, Co can be used as a fourth-element to improve the properties of SAC solder.…”
Section: Introductionmentioning
confidence: 99%
“…Compared with Cu, Ag and Ni, Co has relatively high rigidity and stability with temperature [11]. Furthermore, Co is more active than Cu and can form three Co-Sn IMC below 400ºC [12]. For these reasons, Co can be used as a fourth-element to improve the properties of SAC solder.…”
Section: Introductionmentioning
confidence: 99%
“…Notably, previous study on eutectic SnBi/Co(W,P) system observed the rates of IMC formation and detachment at the P-rich layer are about the same, leading to a nearly constant value of P-rich layer thickness. 25 In contrast, the Prich layer apparently thickened with the increase of aging time in the SAC/Co(W,P) system. This is ascribed to a relatively high Sn content in Pb-free SAC solder which results in more Sn flux into the P-rich layer and thus promotes the IMC formation.…”
Section: Resultsmentioning
confidence: 96%
“…This implies the dominance of diffusion-controlled mechanism in the formation of P-rich layer. 21 Previous studies 10,25 and subsequent TEM analysis indicate the P-rich layer is in fact a mixture of nano-scale IMCs. As a result, the diffusion of Sn through P-rich layer to induce the IMC formation at the front of Co(W,P) should be the controlled process.…”
Section: Resultsmentioning
confidence: 99%
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