An investigation of ionizing radiation damage in different SiGe processes

Li, Pei; Liu, Mohan; He, Chaohui; Guo, Hao; Zhang, Jinxin; Ma, Ting

doi:10.1088/1674-1056/26/8/088503

Cited by 7 publications

(2 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…To our knowledge, although some research groups have employed first principles calculation within the framework of DFT to study the physical properties of Au-Ag alloy and the microscopic behaviors of He defects, few reports have paid attention to the molecular dynamics (MD) simulation [18][19][20][21][22] for He behavior in Au-Ag alloy. In this work, we employ MD method on basis of embedded atom method (EAM) to analyze the physical properties and He behaviors in Au and Ag metal, which can be useful for understanding He point defects in Au-Ag alloy, even δ phase Pu-Ga alloy.…”

Section: Introductionmentioning

confidence: 99%

Energetics and diffusion of point defects in Au/Ag metals: A molecular dynamics study*

He¹,

Qu²,

Niu³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

To reveal the potential aging mechanism for self-irradiation in Pu–Ga alloy, we choose Au–Ag alloy as its substitutional material in terms of its mass density and lattice structure. As a first step for understanding the microscopic behavior of point defects in Au–Ag alloy, we perform a molecular dynamics (MD) simulation on energetics and diffusion of point defects in Au and Ag metal. Our results indicate that the octahedral self-interstitial atom (SIA) is more stable than the tetrahedral SIA. The stability sequence of point defects for He atom in Au/Ag is: substitutional site > octahedral interstitial site > tetrahedral interstitial site. The He–V cluster ( He n V m , V denotes vacancy) is the most stable at n = m. For the mono-vacancy diffusion, the MD calculation shows that the first nearest neighbour (1NN) site is the most favorable site on the basis of the nudged elastic band (NEB) calculation, which is in agreement with previous experimental data. There are two peaks for the second nearest neighbour (2NN) and the third nearest neighbour (3NN) diffusion curve in octahedral interstitial site for He atom, indicating that the 2NN and 3NN diffusion for octahedral SIA would undergo an intermediate defect structure similar to the 1NN site. The 3NN diffusion for the tetrahedral SIA and He atom would undergo an intermediate site in analogy to its initial structure. For diffusion of point defects, the vacancy, SIA, He atom and He–V cluster may have an analogous effect on the diffusion velocity in Ag.

show abstract

Section: Introductionmentioning

confidence: 99%

Energetics and diffusion of point defects in Au/Ag metals: A molecular dynamics study*

He¹,

Qu²,

Niu³

et al. 2019

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…The influence of HPM on modern semiconductor devices and circuit systems has received increasing attention. [2][3][4][5][6][7][8][9][10][11][12] A simulation of a bipolar junction transistor (BJT) with the high electromagnetic pulses injection from the collector was simulated by utilizing the finite difference time domain method in two dimensions, the results indicated that the damage spot lay between the emitter and the collector where the avalanche breakdown occurs. [13] The transient response characteristics were simulated using the improver two-dimensional semiconductor device simulation program in order to obtain the damage effect of the BJT under the injection of electromagnetic pulse, which showed that the peak temperature appears on the edge of the emitter.…”

Section: Introductionmentioning

confidence: 99%

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

Li¹,

Chai²,

Liu³

et al. 2018

Chinese Phys. B

View full text Add to dashboard Cite

A two-dimensional model of the silicon NPN monolithic composite transistor is established for the first time by utilizing the semiconductor device simulator, Sentaurus-TCAD. By analyzing the internal distributions of electric field, current density, and temperature of the device, a detailed investigation on the damage process and mechanism induced by high-power microwaves (HPM) is performed. The results indicate that the temperature elevation occurs in the negative half-period and the temperature drop process is in the positive half-period under the HPM injection from the output port. The damage point is located near the edge of the base-emitter junction of T2, while with the input injection it exists between the base and the emitter of T2. Comparing these two kinds of injection, the input injection is more likely to damage the device than the output injection. The dependences of the damage energy threshold and the damage power threshold causing the device failure on the pulse-width are obtained, and the formulas obtained have the same form as the experimental equations, which demonstrates that more power is required to destroy the device if the pulse-width is shorter. Furthermore, the simulation result in this paper has a good coincidence with the experimental result.

show abstract

Methodologies for Millimeter-Wave Circuit Design in Extreme Environments

Božanić

Sinha

2020

Lecture Notes in Electrical Engineering

View full text Add to dashboard Cite

An investigation of ionizing radiation damage in different SiGe processes

Cited by 7 publications

References 17 publications

Energetics and diffusion of point defects in Au/Ag metals: A molecular dynamics study*

Energetics and diffusion of point defects in Au/Ag metals: A molecular dynamics study*

Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves

Methodologies for Millimeter-Wave Circuit Design in Extreme Environments

Contact Info

Product

Resources

About