An investigation of lateral current injection laser internal operation mechanisms

Suda, D.A.; Lu, H.; Makino, T.; Xu, Jing

doi:10.1109/68.466563

Cited by 12 publications

(15 citation statements)

References 7 publications

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“…Current guides -doped layers of intermediate composition -are placed above and below the active region. We have previously demonstrated two-dimensional fully self-consistent numerical simulation that current guides help to smooth out the lateral material gain profile in the device, 64 permitting efficient pumping of the fundamental optical mode. However, another effect of current guides is to reduce the series resistance of the active region by increasing the area available for the injection of a given current.…”

Section: Hybrid Injection Lasersmentioning

confidence: 99%

Lateral Injection Lasers

Sargent¹,

XU²

2000

Selected Topics in Electronics and Systems

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Since its invention in the 60's, the semiconductor laser has relied on vertical injection of electrons and holes in order to pump the active region to inversion. While many as pects of semiconductor laser development have seen tremendous innovation and marked progress, this vertical injection scheme has remained unchanged. In contrast, the elec tronic transistor has evolved from the early dominance of vertical injection to today's largely lateral injection CMOS platform, which yielded new performance, functionality, and integrability and enabled the astonishingly successful integrated circuit revolution.The lateral current injection laser offers advantages which go far beyond opto electronic integrability: it enables new functionalities, post-fabrication processing and engineering, and in some aspects of normal operation it can lead to greatly improved performances. To realize its full potential, this new class of semiconductor lasers deserves the same attention and the intensive iterations of efforts in theory, design, fabrication, and experimental probing as its vertical cousin has been received.We introduce a first-principles, combined theoretical-experimental approach to the exploration of the LCI laser. It reveals the role of lateral ambipolar drift-diffusion of carriers in either hindering or, potentially, in enhancing the provision of gain to the desired optical mode; of two-dimensional bandstructure engineering of the injection path and active region to achieve low differential resistance and efficient modal gain provision; of selective formation and lateral positioning of heterojunction in enabling high-efficiency device operation; and of adiabatic injection of electrons and holes across diffusivelygraded heterojunctions in facilitating carrier capture into 2D quantum well states.Our results point to the tremendous promise of lasers based on lateral injection of current in enabling vertical cavity lasers with vastly increased performance and functional diversity; multi-terminal devices such as lasers with capacitive gain and wave length tunability; high-speed directly-modulated lasers with reduced chirp; and func tional devices with directly integrated high-speed longitudinal modulation.

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Section: Hybrid Injection Lasersmentioning

confidence: 99%

Lateral Injection Lasers

Sargent¹,

XU²

2000

Selected Topics in Electronics and Systems

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“…Using a simple bulk active region, a device was obtained which lased at 1. the lateral material gain profile in the device, 64 permitting efficient pumping of the fundamental optical mode. However, another effect of current guides is to reduce the series resistance of the active region by increasing the area available for the injection of a given current.…”

Section: Hybrid Injection Lasersmentioning

confidence: 99%

Lateral Injection Lasers

Sargent

1998

Int. J. Hi. Spe. Ele. Syst.

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Since its invention in the 60's, the semiconductor laser has relied on vertical injection of electrons and holes in order to pump the active region to inversion. While many aspects of semiconductor laser development have seen tremendous innovation and marked progress, this vertical injection scheme has remained unchanged. In contrast, the electronic transistor has evolved from the early dominance of vertical injection to today's largely lateral injection CMOS platform, which yielded new performance, functionality, and integrability and enabled the astonishingly successful integrated circuit revolution.The lateral current injection laser offers advantages which go far beyond optoelectronic integrability: it enables new functionalities, post-fabrication processing and engineering, and in some aspects of normal operation it can lead to greatly improved performances. To realize its full potential, this new class of semiconductor lasers deserves the same attention and the intensive iterations of efforts in theory, design, fabrication, and experimental probing as its vertical cousin has been received.We introduce a first-principles, combined theoretical-experimental approach to the exploration of the LCI laser. It reveals the role of lateral ambipolar drift-diffusion of carriers in either hindering or, potentially, in enhancing the provision of gain to the desired optical mode; of two-dimensional bandstructure engineering of the injection path and active region to achieve low differential resistance and efficient modal gain provision; of selective formation and lateral positioning of heteroj unction in enabling high-efficiency device operation; and of adiabatic injection of electrons and holes across diffusivelygraded heterojunctions in facilitating carrier capture into 2D quantum well states.Our results point to the tremendous promise of lasers based on lateral injection of current in enabling vertical cavity lasers with vastly increased performance and functional diversity; multi-terminal devices such as lasers with capacitive gain and wavelength tunability; high-speed directly-modulated lasers with reduced chirp; and functional devices with directly integrated high-speed longitudinal modulation.

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“…Because of this and minimized non-radiative recombination rates at the regrown contacts, injection efficiency is expected to be high. One particular advantage of the LCI LD design over vertical injection designs is that they can support a larger number of QWs [19][20][21] without introducing significant nonuniformity in the carrier distribution among the wells. However, in a design employing too many QWs, the total thickness of an active region grown on top of an N-waveguiding layer may exceed the critical thickness for pseudomorphic growth, and those QWs at the top of the structure may suffer from reduced TE optical gain due to lack of compressive strain [1].…”

Section: Iii-n Based Lateral Current Injection Duv Ld Designmentioning

confidence: 99%

“…As shown in Figure 9, a 115-nm hightemperature AlN buffer layer was grown at 1300 o C on the AlN substrate, followed by a strainrelief interlayer and a waveguide layer. An active region comprising eight periods of 2-nm Al 0.60 Ga 0.40 N quantum wells and 5-nm Al 0.78 Ga 0.22 N quantum barriers was grown directly on the waveguide layer at 1250 o C. To further enhance the Al-adatom mobility, low V/III ratios were individually optimized for the high-temperature AlN buffer layer (20) and AlGaN-based MQW structure (50-100), which was found to promote two-dimensional growth and smooth surface formation. To obtain high-quality AlGaN-based MQWs, active regions on the AlN substrate were grown using intentional interruption between switching the growth conditions of the QW and QB.…”

Section: Development Of Algan-based Mqws On Aln Substrate In F4mentioning

confidence: 99%

Advanced Middle-UV Coherent Optical Sources

Dupuis¹,

Lochner²,

Kao³

et al. 2013

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The overall goals of this program are to develop III-N deep-UV injection lasers operating at <250nm at 300K with CW output power greater than 5mW. The Georgia Tech program is divided into four primary tasks: (1) III-N Materials Growth and Evaluation; (2) Detailed III-N Materials Characterization; (3) III-N UV laser design and simulation; and (4) III-N UV laser processing, testing, and characterization. The recent efforts by the Georgia Tech/ASU team are summarized below. This report will focus on the recent work in the past six months of the program. Summary of Overall Program Major Accomplishments:1. We have developed MOCVD growth technologies for III-N deep-UV lasers on two different growth systems: the "standard" Thomas-Swan 6x2 Close-Coupled Showerhead MOCVD reactor using AlGaN-AlN growth conditions at ~1150C, and one new high-temperature AIXTRON 3x2 Close-Coupled Showerhead MOCVD system operating at up to ~1300C, (which was purchased partially with funds from this program), to allow us to explore "higher temperature" growth regimes. 2. We have exploited advanced high-resolution materials growth technologies, e.g., high-angle annular dark-field (HAADF) imaging, Rutherford Back Scattering, high-resolution TEM, and variable-temperature cathodoluminescence, to characterize the III-N wide-bandgap materials. 3. We have developed the most complete and advanced III-N device simulation tool and have utilized it to optimize the optical and electrical performance of deep-UV laser diodes at ~250nm. 4. We have developed and exercised the required III-N UV laser device processing, wafer thinning, facet cleaving, facet coating, and optical characterization techniques and exploited these processes to demonstrate optically pumped pulsed UV lasers at <250nm with thresholds as low as ~297 kW/cm 2 for lasers at =245.3 nm without facet coatings. 5. Additional studies of optically pumped lasers with one facet coated has shown 300K lasing at Report Documentation PageForm Public reporting burden for the collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, to Washington Headquarters Services, Directorate for Information Operations and Reports, 1215 Jefferson Davis Highway, Suite 1204, Arlington VA 22202-4302. Respondents should be aware that notwithstanding any other provision of law, no person shall be subject to a penalty for failing to comply with a collection of information if it does not display a currently valid OMB control number. REPORT DATE NOV 20132. REPORT TYPE We have developed MOCVD growth technologies for III-N deep-UV lasers on two different growth systems: the ?standard? Thomas-Swan 6x2 Close-Coupled Showerhead MOCVD reactor using AlGaN-AlN growth conditions at ~1150C, ...

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An investigation of lateral current injection laser internal operation mechanisms

Cited by 12 publications

References 7 publications

Lateral Injection Lasers

Lateral Injection Lasers

Lateral Injection Lasers

Advanced Middle-UV Coherent Optical Sources

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