An investigation of nonideal base currents in advanced self-aligned 'etched-polysilicon' emitter bipolar transistors

Chantre, A.; Festes, G.; Giroult-Matlakowski, G.; Nouailhat, A.

doi:10.1109/16.81626

Cited by 29 publications

(4 citation statements)

References 12 publications

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“…This is attributed to the electron tunneling from the valence to the conduction band via processinduced midgap states at the Si/SiO 2 interface and in Si near the Si/SiO 2 interface. 25,26 The application of reverse bias V BE ϭ5.75 V on this device causes both a gradual increase in I B and a spontaneous appearance of RTS fluctuations. Such observations were previously reported.…”

Section: Resultsmentioning

confidence: 99%

“…They were fabricated at the France Telecom Research and Development Center-Grenoble. 25,26 Mean emitter and base doping concentrations are about 10 19 and 10 18 cm Ϫ3 , respectively. The emitter/base and base/collector junctions are located about 500 and 3000 Å below the polysilicon/substrate interface.…”

Section: Methodsmentioning

confidence: 99%

“…The generation at these defects induces an inherent leakage current due to the defect-assisted-tunneling ͑DAT͒ mechanism. 25,26 According to the value of V BE where an onset of hot carrier generation and of avalanche multiplication occurs, we distinguish two types of stress:…”

Section: Methodsmentioning

confidence: 99%

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Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Pogány

Chroboczek

Ghibaudo³

2001

Journal of Applied Physics

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Articles you may be interested inPhysical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses Random telegraph signals of tetrahedral-shaped recess field-effect transistor memory cell with a hole-trapping floating quantum dot gate Identification of isolation-edge related random telegraph signals in submicron silicon metal-oxide-semiconductor field-effect transistorsWe investigate physical mechanisms of random telegraph signal ͑RTS͒ noise in reverse base current of hot carrier-degraded polysilicon emitter bipolar junction transistors. RTS noise, analyzed in the time domain, is studied as a function of reverse base-emitter bias, temperature, and additional reverse-bias stress. Two-level RTS with a relative amplitude as high as 100% is observed at room temperature. The RTS amplitude varies exponentially with the applied reverse base-emitter voltage and depends weakly on temperature. The additional hot carrier stress is observed to induce changes in RTS amplitude and mean pulse widths ͑independent or correlated͒, and a disappearance/ reappearance of the RTS fluctuations. The results are interpreted by a model where the RTS noise is caused by fluctuations of generation-recombination (g-r) parameters ͑i.e., capture cross sections and energy position in the gap͒ of a stress-induced complex bistable defect ͑CBD͒ at the Si/SiO 2 interface. The complex defect is assumed to be either a two-state fast interface state or an interacting pair of a fast interface state with a slow neighboring border trap. The RTS amplitude is well explained by fluctuations in a single-defect electric-field-enhanced g-r rate between a finite value and naught. The RTS amplitude-bias characteristics and their temperature dependence are satisfactorily accounted for by an expression for a phonon-assisted tunneling current via a single deep-level state. The model parameters are the g-r parameters of the defect and its spatial position in the base-emitter p -n junction. The stress-induced changes in the RTS noise are attributed to the influence of log-time trapping of hot carriers on border states laying in the vicinity of a CBD center. The charged border traps interact with a CBD, changing both its g-r parameters and the RTS switching behavior. The variations in RTS parameters are related to the microscopic nature of the interaction and are discussed for the two types of the CBDs.

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

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Random telegraph signal noise mechanisms in reverse base current of hot carrier-degraded submicron bipolar transistors: Effect of carrier trapping during stress on noise characteristics

Pogány

Chroboczek

Ghibaudo³

2001

Journal of Applied Physics

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“…3. The observed base leakage is located at the surface where the link-base doping is high, and can be characterized as trap-assisted tunneling 161, [7]. The lower base leakage in the SiN, samples is related to two properties of LPCVD nitrides: first, a high level of hydrogen is built into the SiN, films during deposition and can be partly released during alloying.…”

Section: Emitter-base Structurementioning

confidence: 99%