An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Gonzalez, Jose Ortiz; Alatise, Olayiwola; Hu, Junlin; Li, Ran; Mawby, Philip

doi:10.1109/tpel.2016.2631447

Cited by 104 publications

(55 citation statements)

References 41 publications

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“…Switching the devices at lower switching rates (with higher R G ) minimizes the hindering effect of the parasitic inductances on the temperature sensitivity of the turn-on transient, as was explained in [3]. Neglecting parasitic inductance, the switching rate of the drain current of a MOSFET in saturation is given by Eq.…”

Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

“…Previous research [3] shows that the switching rate of the drain current during turn-on (dI DS /dt) could be an effective TSEP for SiC MOSFETs and that its temperature sensitivity is improved when the magnitude of the switching rate is reduced.…”

Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

“…The result of this is that the switching rate in Si MOSFETs either has a negative TC or is temperature invariant. However, in the case of the SiC MOSFET, the saturation transconductance has a positive TC because the negative TC of V TH dominates the negative TC of β [3]. Hence, SiC MOSFETs have the unique property of switching-on faster at higher temperatures.…”

Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

“…In [3] it was shown that the temperature sensitivity is higher for higher rated current devices, with higher input capacitances. Hence a 1200 V/42A SiC MOSFET from Cree/Wolfspeed with datasheet reference CMF20120D has been selected for the evaluating the impact of the gate driver output voltage (V GG ) on the temperature sensitivity of the switching rate.…”

Section: Sic Mosfet Switching Rate Characterizationmentioning

confidence: 99%

“…The turn-on current switching rate dI DS /dt has previously been shown to increase with temperature and has thus been identified as a potential TSEP [3]. Due to the impact of parasitic inductance under high dI/dt conditions, the temperature sensitivity was shown to improve when the SiC MOSFET was driven at slower switching speeds.…”

Section: Introductionmentioning

confidence: 99%

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Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

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Condition monitoring using temperature sensitive electrical parameters (TSEPs) is widely recognized as an enabler for health management of power modules. The on-state resistance/forward voltage of MOSFETs, IGBTs and diodes has already been identified as TSEPs by several researchers. However, for SiC MOSFETs, the temperature sensitivity of on-state voltage/resistance varies depending on the device and is generally not as high as in silicon devices. Recently the turn-on current switching rate has been identified as a TSEP in SiC MOSFETs, but its temperature sensitivity was shown to be significantly affected by the gate resistance. Hence, an important consideration regarding the use of TSEPs for health monitoring is how the gate driver can be used for improving the temperature sensitivity of determined electrical parameters and implementing more effective condition monitoring strategies. This paper characterizes the impact of the gate driver voltage on the temperature sensitivity of the on-state resistance and current switching rate of SiC power MOSFETs. It is shown that the temperature sensitivity of the switching rate in SiC MOSFETs increases if the devices are driven at lower gate voltages. It is also shown, that depending on the SiC MOSFET technology, reducing the gate drive voltage can increase the temperature sensitivity of the on-state resistance. Hence, using an intelligent gate driver with the capability of customizing occasional switching pulses for junction temperature sensing using TSEPs, it would be possible to implement condition monitoring more effectively for SiC power devices.

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Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

Section: Sic Mosfet Switching Rate Analysismentioning

confidence: 99%

Section: Sic Mosfet Switching Rate Characterizationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Gonzalez

Alatise

2017

Microelectronics Reliability

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Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

Liu,

et al. 2024

Circuit Theory & Apps

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Because of the advantages of high switching speed, silicon carbide (SiC) devices are widely used in high‐power power electronic equipment. Real‐time monitoring of junction temperature is very important for the safe operation of equipment. There have been many studies on traditional junction temperature monitoring methods based on Si IGBT, but the dynamic characteristics of SiC MOSFETs are changed due to their different physical structure and parasitic parameters, which make the traditional methods no longer applicable. In this paper, the junction temperature can be extracted from the switching process of SiC MOSFET by using the turn‐off voltage spike as the index of thermosensitive electrical parameter (TSEP). In addition, the effect of working voltage, current, and different materials on turn‐off voltage spike is also studied. The simulation platform of Ansys/Simplorer and the experimental test platforms are built, and the theory of junction temperature detection based on turn‐off voltage spike is verified. The simulation and experimental results show that turn‐off voltage spike is a feasible TSEP, which can be used to extract junction temperature of SiC MOSFET with good linearity and instantaneity.

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Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs

Liu

Yin

et al. 2022

J. Power Electron.

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An Investigation of Temperature-Sensitive Electrical Parameters for SiC Power MOSFETs

Cited by 104 publications

References 41 publications

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Impact of the gate driver voltage on temperature sensitive electrical parameters for condition monitoring of SiC power MOSFETs

Junction temperature monitoring of silicon carbide MOSFET based on turn‐off voltage spike

Correction method for calculating junction temperature considering parasitic effects in SiC MOSFETs

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