2010
DOI: 10.1016/j.actamat.2010.03.023
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An investigation of the effect of structural order on magnetostriction and magnetic behavior of Fe–Ga alloy thin films

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Cited by 52 publications
(34 citation statements)
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“…4 o that corresponds to A2 structure. Though this is the most likely crystal structure, it could also be that of DO 3 (Fe 3 Al type, α"), which have X-ray diffraction reflections at (220) for 43.6 o peak and (400) for 63.4 o [2,11] , since the alloy composition is in the range of 25 between 25 and 30%.…”
Section: Resultsmentioning
confidence: 99%
“…4 o that corresponds to A2 structure. Though this is the most likely crystal structure, it could also be that of DO 3 (Fe 3 Al type, α"), which have X-ray diffraction reflections at (220) for 43.6 o peak and (400) for 63.4 o [2,11] , since the alloy composition is in the range of 25 between 25 and 30%.…”
Section: Resultsmentioning
confidence: 99%
“…2) have been fitted with Voigttype functions (Zeeman sextets convoluted with Gaussian hyperfine field distributions), what is a common procedure for disordered alloys [7,8]. In order to minimize χ 2 function combined gradient-genetic algorithm was utilized (like in previous paper [2]) transcribed for MS Excel VBA language. Experimental spectra with theoretical fits and corresponding hyperfine field distributions for Fe 80 Ga 20 films of different thickness are presented in Fig.…”
Section: Resultsmentioning
confidence: 99%
“…This material is applied in magnetic microelectromechanical systems (MagMEMS) [1]. Recently [2], polycrystalline Fe 100−x Ga x films (14 ≤ x ≤ 32) deposited on Si(100) with a co-sputtering and evaporation technique were investigated. X-ray diffraction outcomes showed that all films had 110 crystallographic texture normal to the film plane.…”
Section: Introductionmentioning
confidence: 99%
“…The system consisted of 57 Co(Rh) X-ray source on a vibrator moving with constant acceleration, and gas flow type conversion electron detector (Model MM/CED-3) in 2 backscattering mode for counting the resonant 7.3 and 5.6 keV electrons (generated by the internal conversion process). The same equipment was successfully applied for the recent investigations of high-magnetostrictive Fa-Ga thin layers [12][13][14]. The thickness both of previous and present samples was smaller than penetration depth of conversion electrons [15] thus our thin layered structures were probed over the full cross-section.…”
Section: Experimental Set-upmentioning
confidence: 99%
“…A numerical minimisation of 2 function was performed by means of PolMoss software (based on MS Excel Solver extension) offering both gradient and evolutionary algorithms. Previously, this package was effectively applied for CEMS spectra analysis of in the case of Fa-Ga thin layers [12][13][14]. Fig.…”
Section: Experimental Set-upmentioning
confidence: 99%