Abstract:Abstract-This work examines the effect of iron as a contaminate implant impurity on the characteristics of boron p + n silicon diodes. Plasma-based doping processes [e.g., plasma source ion implantation (PSII)] are subject to concerns about the introduction of contaminant impurities. Here, a relevant database on iron contaminant effects was acquired through a controlled study using conventional ion-beam implantation. Uncontaminated control diodes had leakage current densities of 6-9 nA-cm 02 at 05 volts and id… Show more
Set email alert for when this publication receives citations?
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.