An investigation of the work function and stability of chromium oxide thin films deposited by reactive magnetron sputtering

Oje, A.M.; Ogwu, A. A.; Oje, Alex I.

doi:10.1007/s10800-022-01718-6

Cited by 4 publications

(1 citation statement)

References 38 publications

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“…Although significant changes in the work function were observed before and after etching, a difference of only ∼0.02 eV could be observed under different plasmas. This could be attributed to the fact that the plasma-etching process causes defects on the surface of the thin film, and the presence of these defects increases the energy required to capture electrons and remove them from the surface [34,35].…”

Section: Resultsmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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Indium gallium tin oxide (IGTO) thin films have the potential for high mobility and low-temperature processing, which makes them suitable for applications such as display backplanes and high-voltage switching devices. However, very few studies have investigated the plasma-etching characteristics of IGTO and changes in its properties after etching. In this study, the etching characteristics of IGTO were investigated using Cl2/Ar plasma, and changes in surface properties were analyzed. Results showed that the etch rate increased with an increase in the proportion of Cl2, with the highest etch rate observed at 69 nm/min in pure Cl2 plasma with a gas flow rate of 100 sccm. Furthermore, increased radio-frequency power caused a rise in the etch rate, while a process pressure of 15 mTorr was optimal. The primary etching mechanism for IGTO thin films under Cl2 plasma was a chemical reaction, and an increased work function indicated the occurrence of defects on the surface. In addition, the etching process reduced the surface roughness of Cl2-containing plasma, whereas the etching process in pure Ar plasma increased surface roughness. This study contributes to a better understanding of the plasma-etching characteristics of IGTO and changes in its properties after etching, providing valuable insights for IGTO-based applications.

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Section: Resultsmentioning

confidence: 99%

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Joo

Choi

Hou

et al. 2023

Plasma Sci. Technol.

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Atomic-layer-deposited CuxCryOz thin films: Optoelectronic properties and potential application as hole-selective contacts for c-Si solar cells

Bartholazzi,

Jussila,

Obenlüneschloß

et al. 2025

Applied Surface Science

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Arc erosion properties of CuCr/Ti₃C₂ under elevated voltages and repetitive arc breakdowns

Zhou,

Zhang,

Tian

et al. 2025

Materials Characterization

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An investigation of the work function and stability of chromium oxide thin films deposited by reactive magnetron sputtering

Cited by 4 publications

References 38 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Atomic-layer-deposited CuxCryOz thin films: Optoelectronic properties and potential application as hole-selective contacts for c-Si solar cells

Arc erosion properties of CuCr/Ti₃C₂ under elevated voltages and repetitive arc breakdowns

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An investigation of the work function and stability of chromium oxide thin films deposited by reactive magnetron sputtering

Cited by 4 publications

References 38 publications

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl2/Ar plasma

Atomic-layer-deposited CuxCryOz thin films: Optoelectronic properties and potential application as hole-selective contacts for c-Si solar cells

Arc erosion properties of CuCr/Ti₃C₂ under elevated voltages and repetitive arc breakdowns

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Product

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Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma

Etching characteristics and surface modification of InGaSnO thin films under Cl₂/Ar plasma