An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear

Hu, Fei; Zhou, Wenjie; Chen, Hongyan; Ma, Lei; Zhang, Chi; Lu, Ming

doi:10.1186/s11671-017-2388-y

Cited by 12 publications

(5 citation statements)

References 39 publications

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“…All the wafers with MACE show a slight decrease in minority carrier lifetime. It has been demonstrated that the minority carrier lifetime decreases by increasing the front surface area [26,27]. The MACE processes lead to dangling bonds and dislocations that also result in a severe Shockley–Read–Hall recombination [18].…”

Section: Resultsmentioning

confidence: 99%

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

et al. 2019

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In this study, needle-like and pyramidal hybrid black silicon structures were prepared by performing metal-assisted chemical etching (MACE) on alkaline-etched silicon wafers. Effects of the MACE time on properties of the black silicon wafers were investigated. The experimental results showed that a minimal reflectance of 4.6% can be achieved at the MACE time of 9 min. The height of the nanostructures is below 500 nm, unlike the height of micrometers needed to reach the same level of reflectance for the black silicon on planar wafers. A stacked layer of silicon nitride (SiNx) grown by inductively-coupled plasma chemical vapor deposition (ICPCVD) and aluminum oxide (Al2O3) by spatial atomic layer deposition was deposited on the black silicon wafers for passivation and antireflection. The 3 min MACE etched black silicon wafer with a nanostructure height of less than 300 nm passivated by the SiNx/Al2O3 layer showed a low surface recombination rate of 43.6 cm/s. Further optimizing the thickness of ICPCVD-SiNx layer led to a reflectance of 1.4%. The hybrid black silicon with a small nanostructure size, low reflectance, and low surface recombination rate demonstrates great potential for applications in optoelectronic devices.

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Section: Resultsmentioning

confidence: 99%

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

et al. 2019

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“…In the followings, for the numerical calculations, we use the parameters of halide PVK (CH 3 NH 3 PbI 3 ), TiO 2 as ETM and NiO as HTM. To construct the energy diagram, we used the following knowledge for the energy of the band gap (E g ), the affinity ( χ) and discontinuities in the conduction and valence bands (ΔE C , ΔE V ) of materials: [37] ; [38] 1 ; [39] ; ( [21] ); [40] ; [41] ; [37] ; [15] ; [39] ; [42] ; [40] ; ; ; ; ; ; ; ; Under the action of the incident radiation, multiple reflections occur inside the structure. For further theoretical modeling of such a three-layer structure, we represent each layer with its complex refractive index and corresponding thickness (Figure 2).…”

Section: Theory and Simulationmentioning

confidence: 99%

“…A simple empirical relationship between the band-gap energy and refractive index for PVK was developed and proposed. Due to the wider band gap of PVK (1.56-1.65 eV) than that of b-Si (1.54 eV [15] ) and c-Si (1.12 eV), its absorption spectrum is shifted to a short-wavelength region of the spectrum, where the absorption of b-Si and c-Si is lower.…”

Section: Introductionmentioning

confidence: 99%

Optical Properties of the Crystalline Silicon-black Silicon-perovskite Tandem Solar Cells

Gasparyan

2023

Advanced Materials Science and Technology

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The optical properties of a tandem three-layered structure of crystalline silicon-black siliconperovskite have been theoretically studied for using it in solar energy conversion. The transfer matrix method is used for obtaining the analytical expressions for the reflection, transmission, and absorption coefficients. It is shown that the transfer matrix method can be successfully applied to the more complicated case of three layers with complex refractive indexes. Numerical calculations performed at an angle of incidence of radiation of 60 o showed that in the region of short wavelengths the reflection coefficient takes on low values (several percent), which gradually increase and become > 10% at wavelengths above 0.8 μm. The theoretically modeled results of the reflection coefficient are in good agreement with experimental data carried out for the structures crystalline silicon-black silicon-TiO 2 -perovskite. The discrepancy between the experimental and model data slowly increases with increasing wavelength. The transmittance was extremely low and increased slowly with the increasing wavelength. It is found that cheaper and easier created tandem crystalline silicon-black siliconperovskite structure may have the potential for solar energy conversion.

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“…[1][2][3][4][5][6] Although the photoelectric conversion efficiency of the c-Si solar cell in the laboratory has been approaching its theoretical limit, [7][8][9] for commercial c-Si solar cells, there is still much room to improve their performances by further reducing optical and electrical losses and extending the wavelength range of photovoltaic response in costeffective manners. [10][11][12][13][14][15] The approach of hydrogen plasma passivation has usually been used to enhance the photocharge transport by passivating bulk dangling bonds in the a-Si, c-Si, and other solar cells. [16][17][18][19][20][21][22][23][24][25][26][27] However, approaches of this kind would bring severe ion-radiation damages to solar cells, which degrade the performance of a solar cell.…”

Section: Introductionmentioning

confidence: 99%

Improving the performance of crystalline Si solar cell by high-pressure hydrogenation*

Dai¹,

Zhang²,

Wang³

et al. 2020

Chinese Phys. B

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We report an approach of high-pressure hydrogenation to improve the performance of crystalline Si (c-Si) solar cells. As-received p-type c-Si wafer-based PN junctions were subjected to high-pressure (2.5 MPa) hydrogen atmosphere at 200 °C, followed by evaporating antireflection layers, passivation layers, and front and rear electrodes. The efficiency of the so prepared c-Si solar cell was found to increase evidently after high-pressure hydrogenation, with a maximal enhancement of 10%. The incorporation of hydrogen by Si solar cells was identified, and hydrogen passivation of dangling bonds in Si was confirmed. Compared to the regular approach of hydrogen plasma passivation, the approach of high-pressure hydrogenation reported here needs no post-hydrogenation treatment, and can be more convenient and efficient to use in improving the performances of the c-Si and other solar cells.

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An Investigation on a Crystalline-Silicon Solar Cell with Black Silicon Layer at the Rear

Cited by 12 publications

References 39 publications

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

Low Reflection and Low Surface Recombination Rate Nano-Needle Texture Formed by Two-Step Etching for Solar Cells

Optical Properties of the Crystalline Silicon-black Silicon-perovskite Tandem Solar Cells

Improving the performance of crystalline Si solar cell by high-pressure hydrogenation*

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