An ionic conjugated polymer from the catalyst-free polymerization of 2-ethynylpyridine using 3,4,5-trimethoxybenzoyl chloride

Gal, Yeong‐Soon; Jin, Sung‐Ho; Park, Jong‐Wook; Lim, Kwon Taek

doi:10.1007/s13233-017-5107-8

Cited by 12 publications

(1 citation statement)

References 38 publications

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“…Alternatively, utilization of electrolyte materials as the gate dielectric for MoS 2 and other 2D materials has also been attempted. − The electric double layer (EDL) formed in an electrolyte is capable of inducing accumulation of an ultrahigh charge density in the contacting 2D materials at low operation voltages. For example, ionic-liquid-gated MoS 2 devices provided a significant carrier mobility of over 40–60 cm 2 V –1 s –1 .…”

Section: Introductionmentioning

confidence: 99%

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1

et al. 2018

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Room temperature electron mobility of >100 cm2 V–1 s–1 is achieved for a few-layer MoS2 transistor by use of a polyanionic proton conductor as the top-gate dielectric of the device. The use of a proton conductor that inherently exhibits a cationic transport number close to 1 yields unipolar electron transport in the MoS2 channel. The high mobility value is attributed to the effective formation of an electric double layer by the proton conductor, which facilitates electron injection into the MoS2 channel, and to the effective screening of the charged impurities in the vicinity of the device channel. Through careful temperature-dependent transistor and capacitor measurements, we also confirm quenching of the phonon modes in the proton-conductor-gated MoS2 channel, which should also contribute to the achieved high mobility. These devices are then used to assemble a simple resistive-load inverter logic circuit, which can be switched at high frequencies above 1 kHz.

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Section: Introductionmentioning

confidence: 99%

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1

et al. 2018

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Electro-optical and electrochemical properties of poly(1-ethynyl-4-phenoxybenzene)

Gal

Jin

Shim

et al. 2017

Molecular Crystals and Liquid Crystals

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Poly(N-bromo-2-ethynylpyridinium bromide) for quasi-solid state dye-sensitized solar cell applications

Park

Bae

Jin

et al. 2018

Molecular Crystals and Liquid Crystals

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An ionic conjugated polymer from the catalyst-free polymerization of 2-ethynylpyridine using 3,4,5-trimethoxybenzoyl chloride

Cited by 12 publications

References 38 publications

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1

Electro-optical and electrochemical properties of poly(1-ethynyl-4-phenoxybenzene)

Poly(N-bromo-2-ethynylpyridinium bromide) for quasi-solid state dye-sensitized solar cell applications

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An ionic conjugated polymer from the catalyst-free polymerization of 2-ethynylpyridine using 3,4,5-trimethoxybenzoyl chloride

Cited by 12 publications

References 38 publications

Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V–1 s–1

Proton-Conductor-Gated MoS2 Transistors with Room Temperature Electron Mobility of >100 cm2 V–1 s–1

Electro-optical and electrochemical properties of poly(1-ethynyl-4-phenoxybenzene)

Poly(N-bromo-2-ethynylpyridinium bromide) for quasi-solid state dye-sensitized solar cell applications

Contact Info

Product

Resources

About

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1

Proton-Conductor-Gated MoS₂ Transistors with Room Temperature Electron Mobility of >100 cm² V^–1 s^–1